BFR 340T E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFR 340T E6327 is a type of bipolar transistor specifically designed to deliver high-frequency amplification and switching up to 10 gigahertz. It is primarily used in radio frequency (RF) applications, such as cellular radio or satellite television receivers, and microwave systems.

The BFR340T is a Vertical Doped Isolator transistor. This means that it has two terminals, an emitter and base, where the doped material is introduced vertically from the surface rather than horizontally from the sides. This simplifies the manufacturing process, makes it easier to create transistors with high stability and more uniform characteristics, and reduces the parasitic capacitance.

The BFR340T has a maximum operating frequency of 10 GHz, which is much higher than most other transistors, and it also has a maximum power rating of 45 watts, which is quite high for its size. This makes it suitable for high-power RF applications. It also has a relatively low collector-emitter breakdown voltage of 11V, making it well-suited for low-voltage applications.

The BFR340T is designed to work as an amplifier in RF applications, amplifying signals with frequencies up to 10 GHz. It works by using a base current at the emitter to control the collector current. As the base current increases, the collector current also increases, which amplifies the signal. The base current is typically modulated, which causes the transistor to turn on and off rapidly and amplifies the input signal.

The BFR340T has a couple of different configurations. The most popular configuration is the common-emitter configuration, where the emitter is connected to ground and the collector is connected to the output. This configuration is used to produce high-gain amplification of the input signal. Another configuration is the common-base configuration, where the base is connected to ground and the collector is connected to the output. This configuration is used to produce low noise and low distortion amplification.

The BFR340T also has a high input impedance, which means it can be used in applications requiring signals with very low insertion losses. This property makes it particularly well-suited for use in IF (intermediate frequency) stages in receivers, as it can maintain a high-gain input without introducing much noise. The BFR340T also has high gain and low output impedance, making it ideal for use as an oscillator.

In conclusion, the BFR340T E6327 is a type of bipolar transistor designed for high frequency amplification and switching up to 10 gigahertz. It is especially well-suited for RF applications such as cellular radio or satellite television receivers, and microwave systems. Its two main configurations are common-emitter and common-base, and it has high input impedance, high gain, and low output impedance, making it an ideal choice for amplifier and oscillator applications.

The specific data is subject to PDF, and the above content is for reference