BFR 360L3 E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFR 360L3 E6327 is a high-performance, low-noise Radio Frequency (RF) transistor often used in high-frequency applications, especially in applications that require low-power consumption. It is a three-terminal, NPN Silicon-Germanium Bipolar Junction Transistor (BJT) with a maximum transition frequency (fT) of 27GHz, making it ideal for use in communication systems, cellular telecommunications, and other RF elements.

The BFR 360L3 E6327 is designed to provide high linear or saturated gain with its low-power consumption. The small size of the transistor allows it to be used in applications where space is at a premium and the high gain makes it ideal for amplifying RF signals. This BJT is also very stable in high temperatures with a maximum permissible junction temperature of 150 degrees Celsius.

The gain and linearity of the transistor are also quite impressive with a minimum gain of 20dB and a gain flatness of less than 0.7dB over the operating frequency range. Additionally, the specified linear parameter is - 41dBm, which is an impressive figure for a bipolar transistor. This parameter is measured at a junction temperature of 25 degrees Celsius and the current gain is related to the output power at 1dB compression.

The BFR 360L3 E6327 is based on the principle of bipolar transistors whereby the current is controlled by a base-collector junction. This junction is controlled by the voltage applied to the base, which controls the current flowing through the transistor. This current is then amplified to the collector and appears at the output as an amplified signal.

In the case of the BFR 360L3 E6327, the voltage applied to the base is between 0 and 4V. The transistor does not have a breakdown voltage and so the current is limited to 3A max. The device also has a capacitance of between 2.0 and 2.9pF, depending on the application. This capacitance is related to the output power and can be used to alter the gain of the transistor.

This transistors applications are wide, due to its high gain, low power consumption, and low noise figure. It is often used in amplifiers, oscillators, pre-amplifiers, power amplifiers, mixers, modulators and other applications. Due to its high-reliability, it is also often used in high-reliability Aerospace and Defense applications.

In summary, the BFR 360L3 E6327 is an impressive NPN Silicon-Germanium Bipolar Junction Transistor (BJT) offering high linear or saturated gain, low power consumption, wide operating temperature range and high gain flatness. This transistor is ideal for communication systems, cellular telecommunications and other RF elements.

The specific data is subject to PDF, and the above content is for reference