BFR 705L3RH E6327

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The BFR 705L3RH E6327 is a NPN low profile, high power, broadband, RF transistor with high gain, very high stability and high efficiency in the RF and Microwave communication frequency range. It is used for applications such as power amplifiers, oscillators, low noise and gain blocks. It is a versatile device capable of providing high levels of performance in many applications, from mobile telecom to high frequency satellite communications.

The BFR 705L3RH E6327 is an enhancement mode NPN transistor with an operating frequency range of 700 MHz to 1000 MHz. It has a collector-emitter breakdown voltage of 31 V, an emitter-base breakdown voltage of 5.5V, and a collector current of 80 mA. The maximum power dissipation rating is 1.5W with a collector power gain of 15 dB and a noise figure of 3 dB. The device is easily configured and requires no bias components. It is available in 4 surface mount and lead frame packages.

At the heart of the BFR 705L3RH E6327 is a technology called heterojunction bipolar transistor (HBT). HBTs incorporate two semiconductor layers: an Emitter Layer and a Base Layer. The Emitter Layer consists of a single crystal germanium semiconductor embedded in a silicon matrix. This combination provides for the increased gain, high frequency performance, and low gate capacitance found with this device. The Base Layer is an epitaxially grown silicon layer that acts as an electrical hedge against the silicon matrix, allowing for very high frequencies of operation.

The working principle of the BFR 705L3RH E6327 is based on the process of current amplification. When a positive voltage is applied to the base of the device, it creates a low-resistance path to the emitter, allowing current to flow through. The increased current flow causes a corresponding increase in the voltage applied to the collector and the device enters an active state of amplification. When the voltage is removed, the device reverts to its non-conductive state. This allows the device to switch between the active and non-conductive states rapidly and with high frequency, making it suitable for RF applications.

The BFR 705L3RH E6327 is ideally suited for RF and microwave communication applications such as Amplifiers, Oscillators, Low noise and Gain blocks, Power amplifiers, Transceivers and Receivers. It is also a great choice for applications in automotive and medical industries such as medical imaging, electronic countermeasures and radio frequency identification (RFID).

The BFR 705L3RH E6327 is a powerful transistor for many RF and Microwave applications. With the high gain and high efficiency it offers, it provides one of the most advanced technologies available in the field. The device is available in multiple packages, making it easy to configure and install in any scenario. Its high powers ratings and low noise figure makes it an ideal choice for many demanding RF and Microwave applications.

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