BFR 92W E6327

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BFR 92W E6327 belongs to a type of bipolar junction transistor (BJT) called radio frequency (RF) transistors. It is a small size, high-performance, very robust NPN silicon RF transistor that can be used in wide range of applications such as voltage-controlled oscillators (VCOs), video amplifiers, class-C power amplifiers, and linear applications. Its maximum ratings include 130V DC collector-emitter voltage, 6A collector current, and 3W power dissipation.

The working principle of the BFR 92W E6327 transistor is based on the same principles as a standard BJT. It consists of two junction layers (emitter and base) between two regions called the collector and the base. The three layers act as a switch when a small current is applied to the base. When the base current is increased, the two junctions start to conduct current, allowing current to flow from the collector to the emitter. When the current is increased, the transistor is said to be in an active state. The output current is then determined by the voltage applied to the base. The transistor can be used in amplifying circuitry to amplify an applied voltage or current.

The BFR 92W E6327 has a few advantageous features that make it useful in a wide range of applications. It has a high switching speed of up to 10MHz and a high precise current gain from 6.9 to 24. It also features a very low forward voltage (VCE) of 0.6V, it can handle up to 130V, and it can achieve frequency stability in the KHz range. These features help make it suitable for many radio frequency applications, including amplifier circuits and oscillators, where precise frequency stability and response speed are needed. Moreover, it has good thermal characteristics, making it well suited for high power applications such as class C power amplifiers.

In conclusion, the BFR 92W E6327 RF transistor is a high-performance, reliable device that can be used in a variety of applications, both commercial and military. It is particularly suitable for applications that require precise frequency-stability and fast switching time, and the advantages of its low forward voltage and high current gain make it suitable for a wide range of radio frequency applications. Its robust construction also ensures reliable operation and long product life, making this transistor a valuable tool for engineers who require reliable, high-performance RF transistors.

The specific data is subject to PDF, and the above content is for reference