BFR505,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.2dB ~ 2.1dB @ 900MHz
Gain:	--
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 6V
Current - Collector (Ic) (Max):	18mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFR505

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The BFR505,215 transistor is used as part of a variety of field applications, such as radio frequency (RF) amplifiers, RF signal switches, RF oscillators, RF attenuator circuits, and RF limiter circuits. It is mainly used in broadcasting and satellite communications. The BFR505,215 is a high voltage NPN silicon RF transistor that is designed for applications that require high gain, high current, and low noise.To understand the working principle of the BFR505,215, one must first understand the concept of bipolar transistors. Bipolar transistors are electronic components that use the movement of charges in a semiconductor to produce a current. The transistor has three terminals; the base, collector, and emitter. The base is used to control the current flow between the collector and the emitter. When a small current is applied to the base, the transistor amplifies it, allowing for larger current flows between the collector and the emitter. The BFR505,215 transistor is designed for use in radio frequency (RF) applications as it offers high gain and low noise. It is built with a Darlington configuration composed of two bipolar transistors. The combination of the two transistors allows for higher current gains while still providing excellent noise performance. The Darlington configuration also allows for superior high frequency performance when compared to a single transistor.The BFR505,215 is designed to operate between 7.8 V and 20 V. It features an operating current of approximately 4 mA and a maximum current of 200 mA. It also has a gain bandwidth of up to 50 MHz and a maximum voltage of 20 V. It can also be used as a switch in RF circuits due to its high switching speeds. The BFR505,215 is designed for applications where high gain, high current, and low noise are desired. Its Darlington configuration makes it ideal for RF applications such as RF amplifiers, RF signal switches, RF oscillators, RF attenuator circuits, and RF limiter circuits. It is also suited for use in broadcasting and satellite communications. The BFR505,215 can be used in a variety of applications due to its high gain, low noise, and fast switching speeds.

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