BFR520,215 Allicdata Electronics
Allicdata Part #:

568-1648-2-ND

Manufacturer Part#:

BFR520,215

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: TRANS NPN 70MA 15V 9GHZ SOT23
More Detail: RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun...
DataSheet: BFR520,215 datasheetBFR520,215 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: --
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: BFR520
Description

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The BFR520,215 is a high-power RF/microwave transistor that is best used in high-frequency applications, such as amplifiers and other high-frequency circuitry. The device is capable of operating up to 1.0 GHz with a rated output of 200 watts. The BFR520,215 can be used in a variety of applications, from wireless communication to high-efficiency power amplifiers for microwave systems.

The transistor is a bipolar junction transistor (BJT) with an RF amplifier configuration. The transistor has a single base, a single collector and two emitters. It is capable of providing an extremely high gain, with a relatively low input power.

The BFR520,215 is constructed from a single silicon die. The die contains two NPN transistors, which are stacked one on top of the other in a single die configuration. This arrangement increases the gain of the device, and also allows the power level to be increased significantly.

The device operates at a collector-emitter voltage of 25V DC and can handle peak power levels up to 200W. The BFR520,215 has an input power requirement of 3V, with a current draw of 1A. The device requires an input bias of 8V and an input impedance of 50Ohms. The device is also capable of a noise figure of 4dB at 1GHz and a gain of 20dB.

The transistor can be used in a variety of applications, from high-power amplifiers for microwave systems to linear and nonlinear extrapolation circuitry. The high-frequency circuit performance makes the device ideal for use in radiometry, satellite communications and broadcast, radar, data and telecom systems. The device can also be used in high-efficiency driver and output stages for high definition television equipment.

The BFR520,215 is designed for use in high reliability and high-efficiency RF/Microwave systems. The device is relatively low cost and is capable of providing exceptional performance in high-frequency applications. The device is also highly stable, with a thermal drift rate of 0.0005%/°C. This ensures that the device has a long life and is capable of meeting the requirements of most applications.

The specific data is subject to PDF, and the above content is for reference

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