Allicdata Part #: | 568-1648-2-ND |
Manufacturer Part#: |
BFR520,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 70MA 15V 9GHZ SOT23 |
More Detail: | RF Transistor NPN 15V 70mA 9GHz 300mW Surface Moun... |
DataSheet: | BFR520,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.1dB ~ 2.1dB @ 900MHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 20mA, 6V |
Current - Collector (Ic) (Max): | 70mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFR520 |
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The BFR520,215 is a high-power RF/microwave transistor that is best used in high-frequency applications, such as amplifiers and other high-frequency circuitry. The device is capable of operating up to 1.0 GHz with a rated output of 200 watts. The BFR520,215 can be used in a variety of applications, from wireless communication to high-efficiency power amplifiers for microwave systems.
The transistor is a bipolar junction transistor (BJT) with an RF amplifier configuration. The transistor has a single base, a single collector and two emitters. It is capable of providing an extremely high gain, with a relatively low input power.
The BFR520,215 is constructed from a single silicon die. The die contains two NPN transistors, which are stacked one on top of the other in a single die configuration. This arrangement increases the gain of the device, and also allows the power level to be increased significantly.
The device operates at a collector-emitter voltage of 25V DC and can handle peak power levels up to 200W. The BFR520,215 has an input power requirement of 3V, with a current draw of 1A. The device requires an input bias of 8V and an input impedance of 50Ohms. The device is also capable of a noise figure of 4dB at 1GHz and a gain of 20dB.
The transistor can be used in a variety of applications, from high-power amplifiers for microwave systems to linear and nonlinear extrapolation circuitry. The high-frequency circuit performance makes the device ideal for use in radiometry, satellite communications and broadcast, radar, data and telecom systems. The device can also be used in high-efficiency driver and output stages for high definition television equipment.
The BFR520,215 is designed for use in high reliability and high-efficiency RF/Microwave systems. The device is relatively low cost and is capable of providing exceptional performance in high-frequency applications. The device is also highly stable, with a thermal drift rate of 0.0005%/°C. This ensures that the device has a long life and is capable of meeting the requirements of most applications.
The specific data is subject to PDF, and the above content is for reference
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