BFR505T,115

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The BFR505T 115 is a NPN silicon epitaxial planar transistor designed for microwave and general applications, in a miniature package. This device is ideally suited for applications like : Ultra-High Frequency Low Noise Amplifiers, Wide Band Amplifiers, Pre-Amplifiers and Switching Circuits. The device is a high performance silicon bipolar transistor designed to operate in the high frequency ranges. It is designed to be used in applications where high gain, wide bandwidth characteristics are needed.

The specific package type of the BFR505T 115 is a TO- 126 Inline. The device is equipped with internal protection circuitry to prevent damage from over voltage, galvanic transients, static electricity and electrostatic discharging. It is also protected against reverse polarity. The transistor is provided with a high frequency up-to 2.4GHz along with low noise figure at ultra-high frequency range.

The BFR505T115 is a high power gain device. It has a maximum power dissipation level of 417.2 mW as tested at a temperature of 25°C. Its voltage gain range is 40 – 60 dB, while the power gain of this device is typically 15 dB. The current gain h_FE of this transistor is usually in the range of 80-120. It also has a very low input/output capacitance with f_T of 2.4 GHz and f_max at 5.3 GHz.

The operating temperature range of this device is from -55 °C to +125 °C. Its storage temperature range is from -55 °C to +175 °C. Its Pulsed Current rating is 40 mA. It has a collector-emitter voltage of 6V and can handle peak collector current of 0.1 A.

The working principle of the BFR505T 115 is based on its construction as a bipolar junction transistor. It is made up of two p-n junction diodes arranged back-to-back with base connection in between. These p-n junction diodes form a three-terminal device. When the middle terminal (base) is used as the input and the other two (collector and emitter) are used as the output, the diode behaves as an amplifier or switch. When a small current is applied to the input, it induces a larger current to flow from the output terminals. This is known as the amplification factor or current gain of the transistor.

The BFR505T 115 is ideal for uses where large bandwidths, low noise and high gain are required such as transmitting, receiving and switching circuits for radio, telecommunication and broadband applications. The device is also suited for use as a microwave amplifier where high speed switching is needed. It is also used in switching and amplifier circuitry for computers, digital equipment and general electronics.

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