BFR540,235 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	9GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 2.4dB @ 900MHz
Gain:	--
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 40mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFR540

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Introduction

BFR540,235, also known as NPN transistor, is a high frequency, wide-band RF transistor. It is ideal for use in wide RF bandwidth amplifiers, mixers, and oscillators. It is a commonly used device in the wireless communications industry for applications such as GSM, Wireless Local Loop, and base station applications.

Application Field

The BFR540,235 is suitable for use in a wide variety of radio frequency (RF) applications. It is used in low noise applications such as GSM, WLL, base station, and cellular base station devices, in receivers and transmitters. It offers high gain, high linearity, has low noise, and can efficiently handle large input signals. It is also used in wide band amplifiers, in receivers and transmitters, and in oscillators and other mixed circuits, such as digital programming radio.The BFR540,235 transistor is commonly used in amplifiers for mobile communication systems, FM amplifiers and detectors, wideband RF amplifiers, RF transmitter antenna amplifiers, RF mixer oscillators, and other RF circuits.

Working Principle

The BFR540,235 consists of two epitaxial-base silicon NPN transistors, one for the input and one for the output. The collector of the input transistor is connected to the collector of the output transistor, and to the base of the output transistor. The base of the input transistor is connected to the RF source.The input device is a high-frequency, wide-band NPN transistor class B amplifier, with an AC voltage gain of >30dB. The high gain and wide bandwidth of the input device is designed to produce a large output signal at frequencies up to 1GHz.The output device is a class B power amplifier with active output matching. It consists of two low-noise transistors in parallel. The output power can be increased by adding more transistors. The output power of the amplifier is determined by the input current and the matched output impedance of the output circuit.The BFR540,235 transistor is a high-power, high-efficiency amplifier with a wide frequency response. It uses a low-noise, low-power design to produce an output signal with a large gain and low input/output distortion.

Conclusion

The BFR540,235 transistor is an efficient, high-performance device for RF applications. With a wide frequency response and high gain, it is ideal for use in multiple applications such as GSM, WLL, and base station devices. Its low noise performance and active output matching make it a great choice for amplifiers, mixers, and oscillators. Its high-efficiency power output makes it a valuable tool in designing devices with high output power.

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