Allicdata Part #: | 568-1649-2-ND |
Manufacturer Part#: |
BFR540,215 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 120MA 15V 9GHZ SOT23 |
More Detail: | RF Transistor NPN 15V 120mA 9GHz 500mW Surface Mou... |
DataSheet: | BFR540,215 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Frequency - Transition: | 9GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 2.4dB @ 900MHz |
Gain: | -- |
Power - Max: | 500mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 40mA, 8V |
Current - Collector (Ic) (Max): | 120mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | BFR540 |
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.BFR540,215 is a high power RF NPN transistor manufactured by NXP Semiconductors. It is a high-performance router transistors that features high voltage, high current and low noise figure. It is designed for use in applications such as broadcast receivers, heavy-duty motor-drive circuits, high-power amplifiers and amplifier classes. The device features an integrated heat sink that helps reduce temperature and ensure reliable device operation.
The BFR540,215 has an operating voltage of 6V-360V and can handle currents up to 1.5A. It has a wide range of frequency range from 10kHz to 500MHz. It also has a low noise figure of 0.14dB @30MHz, which ensures a low level of background noise in the amplified signal. The transistor has a high power dissipation of 3.0W @50V and a maximum collector-emitter voltage of 1000V. The transistor also has a maximum junction temperature of 150℃, making it suitable for use in high-temperature applications.
BFR540,215 operates by the principle of bipolar junction transistors (BJT). It consists of three layers of a semiconductor material, usually silicon. In the simplest form, one half is doped with a type of impurity that makes it an emitter. The other half is doped with a different impurity that makes it a collector. The layer between is known as the base. When a positive voltage is applied to the base, the current will flow between the emitter and the collector. By changing the voltage applied to the base, the amount of current flowing between the emitter and the collector can be controlled.
BFR540,215 can be used in a variety of applications, including automotive systems, electronic test equipment, medical equipment, power supplies, communication equipment, and more. Its high power dissipation and wide range of compatible frequencies makes it ideal for use in a range of high-power applications. From boosting radio signals to providing power for industrial equipment, the BFR540,215 provides an efficient and reliable solution for many applications.
In conclusion, BFR540,215 is a quality NPN transistor that can be used for a wide range of applications. With its wide bandwidth, low noise figure, and impressive power dissipation capabilities, it is ideal for applications that require reliable and powerful performance. Its integrated heat sink helps to ensure maximum performance and durability, making it a great option for many applications.
The specific data is subject to PDF, and the above content is for reference
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