BFU710F,115 Discrete Semiconductor Products

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The BFU710F,115 is a NPN transistor that belongs to the family of RF transistors. It belongs to the RF Bipolar Junction Transistor (BJT) category. This device is designed for use in high frequency circuits up to 1500 MHz. The device ability to attenuate signals, switch rapidly and provide considerable power gain makes it an ideal choice for a variety of applications.The BFU710F,115 has a wide range of applications where it performs the function of a low-noise amplifier, oscillator, pre-amplifier and is also well suited for mixer applications. It can also be used to increase the power gain of radio and frequency range signals for applications in commercial and industrial systems. As a general purpose amplifier, the device is potentially suitable for applications such as multi-channel radio receivers, wireless communications, digital processing, and other high-frequency circuits.The BFU710F,115 has a maximum power dissipation of 1W and a maximum collector current of 500mA. The transistor features a low noise figure of 3 dB and a gain of 10 dB at 1.5GHz. It has a low thresh gain of 4.5dB while maintaining a high output power of 15 dBm at 1.5 GHz. The transistor has a high resistance between the emitter and collector, allowing it to be used in RF switching applications. It also has wide reverse bias across the base–collector junction.The BFU710F,115 is a three-terminal device, with a base terminal as the control area between emitter and collector, and the emitter and collector providing the current flow. When a signal is applied to the base terminal of the device, it modifies the voltage between the collector and emitter. This shifts the biasing in the circuit, allowing the transistor to amplify or attenuate the input signal. This modulation of the signal is the working principle of the BFU710F,115 RF transistor.The BFU710F,115 is an ideal device for a range of high-frequency applications, due to its reliable performance, high power gain, low noise figure, and low thresh gain, making it a long-lasting solution for a variety of commercial, industrial and research-based applications. As an RF transistor, it helps to improve the speed and accuracy of signals over long distances, allowing for faster and more reliable data transmission.

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