BFU760F,115 Discrete Semiconductor Products

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The BFU760F,115 is a type of transistor, specifically one built using Bipolar Junction Transistor (BJT) and Radio Frequency (RF) technology. This type of transistor is characterized as having two active regions within the semiconductor and is able to produce current or transfer current depending on the location of the two active regions. This versatility makes them useful for a variety of applications, ranging from simple amplifiers to complex frequency modulation circuits.

As an RF transistor, the BFU760F,115 is designed for use in the most demanding applications. It can be used for both reception and transmission of radio signals and its advanced technology enables superior performance in both situations. With an integrated collector-basis capacitance of 0.36 pF and a rated collector-emitter voltage of 150 V, this transistor is suitable for use in a wide range of communications applications, including base stations and mobile user equipment.

The BFU760F,115 is best suited for use in applications that require extreme precision and high speed. Its most common application areas include high-frequency amplifiers, frequency modulation, RF switching, cellular base stations, and personal communication devices. In addition, its high operating temperature range makes it suitable for use in automotive and other industrial applications.

The working principle of the BFU760F,115 is quite simple. It is basically a three-terminal device, comprising an emitter, collector, and base. When a small current is applied to the base, it triggers a much larger current to flow between the collector and the emitter. This current is determined by the direct relationship between the base current and the current flowing from the collector to the emitter. This mechanism enables the transistor to amplify signals or to serve as a switch in various circuits.

In summary, the BFU760F,115 is a versatile and robust transistor for use in applications that require excellent performance and precision. Thanks to its advanced BJT and RF technology, this transistor is suitable for use in applications that range from simple amplifiers to complex frequency modulation circuits. Its three-terminal structure, combined with a direct current to current relationship, make it an ideal component for RF signaling, frequency modulation and switching applications.

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