BFU790F,115 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	2.8V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Gain:	--
Power - Max:	234mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	235 @ 10mA, 2V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-343F
Supplier Device Package:	4-DFP
Base Part Number:	BFU790

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Introduction

BFU790F,115 is a high-frequency, high-power NPN bipolar transistor developed by Infineon Technologies. It is a transistor with a kind of epitaxial structure that uses a multi-layer planar process technology. This transistor is specifically designed for high-frequency applications and provides excellent balance between gain and power. The maximum oscillating frequency of this device is up to 4.4GHz. The nominal current rating is 6.8A and maximum collector power dissipation is 7.5W. It is typically used in many RF power amplifier applications and provides a good balance between gain and power.

BFU790F,115 Application Fields

The BFU790F,115 has become an important component in mobile communication applications. It is particularly suitable for modern wireless transmission systems, because of its superior performance in terms of frequency, power, and gain. It can be used in RF power amplifiers, transmitters, and receivers, and adapters. It is also used in many other applications, such as object detection, imaging, and navigation.

Working Principle of BFU790F,115

The working principle of the BFU790F,115 is based on the same theory as any other NPN transistor. It uses a base, collector and emitter to control the current flow between the collector and emitter. The amount of current flow through the device depends on the amount of current in the base. By applying a voltage to the base of the transistor, a certain amount of current will flow from the base to the collector, allowing the collector current to increase or decrease. This is known as biasing and is an important principle for achieving specific operating conditions in the device. The biasing is necessary to ensure the optimal performance of a transistor.The FET780F,115 is a type of NPN transistor. When positive potential is applied to the base terminal (B), electrons are attracted to the base and create a channel in the base region. This channel is known as the base-emitter junction and it is formed between the collector and emitter regions. The presence of electrons in the base region causes increased current flow from the collector to the emitter. The BFU790F,115 also uses a reverse-biased collector-base junction, which helps to reduce capacitive loading and enhances the frequency response. This helps to improve the overall performance of the device and helps to reduce power consumption.

Conclusion

BFU790F,115 is a high-performance transistor with a maximum oscillating frequency of 4.4GHz. It provides excellent balance between power and gain making it suitable for many RF applications. Its working principle is based on the same theory as any other NPN transistor, which makes it a reliable and efficient device for many different applications. Its multi-layer planar process technology helps to reduce capacitive loading and improve frequency response, making it suitable for modern wireless communication systems.

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