BFU768F,115 Discrete Semiconductor Products

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The BFU768F,115 is a type of bipolar junction transistor (BJT) designed for use in high frequency (RF) applications. It is a planar, lateral NPN Gate, which utilizes a single-gate “U”-shaped epitaxial structure. This allows for a faster switching speed, higher gain, and improved power handling capabilities compared to other BJT designs.

The BFU768F,115 has a maximum collector current of 10.35 A and a maximum power dissipation of 500 mW at 25°C. It has a minimum noise figure of 0.9 dB, a typical switching time of 2.5 ns, and a maximum frequency of 3.2 GHz. The transistor also has an excellent frequency-temperature ratio of 0.5 GHz/°C, which allows it to operate over a wide temperature range without significant frequency shift.

The BFU768F,115 has an efficient working principle that allows it to provide high levels of power output. The Gate is designed to create a highly energy-efficient current flow, which is optimized for RF applications. The Gate’s high-efficiency current flow is designed to reduce heat dissipation, which helps in increasing the longevity of the component.

In terms of its application field, the BFU768F,115 is ideal for use in high-power RF applications such as cellular base station amplifiers and RF sensors. It is also suitable for low-noise, high gain, and low-bandwidth applications. Additionally, it is suitable for switching applications in radio-frequency systems such as ISM band transmitters.

In summary, the BFU768F,115 is an ideal choice for applications that require high-performance, high-power RF operation. It has an efficient working principle, which enables it to offer excellent power output and low noise. Additionally, its frequency-temperature ratio allows it to be used in a wide range of temperature environments without any significant frequency shift. This makes it an excellent choice for a variety of applications, including high-power RF applications, low-bandwidth applications, and radio-frequency systems.

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