BFU730F,115 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BFU730F is a high-band, high-power RF NPN transistor module manufactured by Infineon Technologies. It is designed for use in wireless handsets, such as mobile phones, 4G base stations and wireless communications systems. The module is capable of delivering up to 115 watts of power at 2.5GHz, making it ideal for applications that require high-power transmission.

This transistor module is constructed from an NPN bipolar junction transistor (BJT) which is formed from two kinds of semiconductor materials. The two materials used in this transistor module are Gallium Arsenide (GaAs) and Silicon (Si). The device is constructed using a structure known as a Darlington Pair, in which two PNP transistors are connected in a common emitter configuration. This results in a device with very high current gain, allowing it to achieve very high power levels.

The device has a wide frequency range, covering the bands of UHF, VHF, and lower microwave frequencies. It also has a wide dynamic range and can be used in applications requiring a low noise figure. Additionally, the device is designed to be very stable and reliable, with a maximum operation temperature of 175℃.

The device is used for applications such as high-power RF amplifiers, transmitters, cellular base stations, and wireless communications system. The device can be used to amplify signals for communication, as well as for power transmission. The module is capable of providing very high power output, making it ideal for high-power applications.

The working principle of the device is based on the NPN bipolar junction transistor (BJT). When a voltage is applied to the base of the transistor, electrons are drawn towards the base and the collector-emitter current increases proportionally. This current can then be used to amplify a signal or power a device, depending on the application.

Overall, the BFU730F is a high-power and wide-band RF NPN transistor module designed for applications that require high power levels and wide frequency range. By utilizing the Darlington Pair structure, the module is able to achieve very high current gain and provide up to 115 watts of power at 2.5GHz. The device is also extremely reliable and stable, making it ideal for use in high-power RF applications.

The specific data is subject to PDF, and the above content is for reference