Allicdata Part #: | BLA8G1011L-300GU-ND |
Manufacturer Part#: |
BLA8G1011L-300GU |
Price: | $ 231.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 16DB SOT502A |
More Detail: | RF Mosfet LDMOS 32V 150mA 1.06GHz 16.5dB 300W CDFM... |
DataSheet: | BLA8G1011L-300GU Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 210.89400 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.06GHz |
Gain: | 16.5dB |
Voltage - Test: | 32V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 300W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502A |
Supplier Device Package: | CDFM2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BLA8G1011L-300GU is a high frequency, monolithic, field-effect transistor (FET) and is used in radio frequency (RF) applications. It is designed to provide a robust link between radio frequency modules and the rest of an application’s processor. This device combines impressive performance capabilities with stable operation and long-term power gains.
While the BLA8G1011L-300GU has many uses, some of its most common applications include: Bluetooth, WLAN, cellular radio receivers and base stations, set-top boxes, scanners, radios, and industrial automation and control systems.
The BLA8G1011L-300GU is composed of an innovative monolithic design that pairs a transconductance amplifier with an insulated-gate FET into a single-milling process. This combination not only makes the device compatible to other transistor gates and elements, but also boasts an impressive –88 dBm maximum input power sensitivity.
Its operation is straightforward, yet powerful. When an input voltage is applied, the low-noise FET amplifies the signal and tran- sfers it to other circuits in the application. This enables applications to detect and respond to a variety of frequencies and signals. Additionally, the FET’s unique structure improves its current-handling capability and reduces power dissipation in the device.
The BLA8G1011L-300GU also has integrated on-chip protection to boost the device’s robustness and integrity, as well as its change-over time. Thanks to these features, the device is capable of performing efficiently and reliably in both internal and external amplifiers, making it suitable for a wide range of applications, from consumer electronics to advanced industrial systems.
To sum up, the BLA8G1011L-300GU FET is an excellent choice for applications that require high levels of power, performance, and robustness. Its monolithic design and sophisticated circuitry provide superior performance in a small convenient package. This device is designed for use in radio frequency systems and is ideal for applications such as Bluetooth, WLAN, set-top boxes, scanners, radios, and more.
The specific data is subject to PDF, and the above content is for reference
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