Allicdata Part #: | BLA8G1011LS-300GU-ND |
Manufacturer Part#: |
BLA8G1011LS-300GU |
Price: | $ 231.99 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 65V 16DB SOT502E |
More Detail: | RF Mosfet LDMOS 32V 150mA 1.06GHz 16.5dB 300W CDFM... |
DataSheet: | BLA8G1011LS-300GU Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 210.89400 |
Voltage - Test: | 32V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 150mA |
Power - Output: | 300W |
Voltage - Rated: | 65V |
Package / Case: | SOT-502E |
Supplier Device Package: | CDFM2 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.06GHz |
Gain: | 16.5dB |
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.The BLA8G1011LS-300GU is a surface-mount ceramic Low-Noise Amplifier (LNA) from OSI Optoelectronics, packaged in a 24-pin flat pack. This device is specifically designed for applications that require a low noise figure, such as radio receivers, communication systems, and mobile radio systems.
The BLA8G1011LS-300GU is a high-performance amplifier with a low-noise figure, optimized for operation in the range of 240 to 960 MHz. It is designed using an optimized GaAs process, which yields high gain and excellent noise performance with power consumption as low as 0.65mA.
The BLA8G1011LS-300GU is based on a Field-Effect Transistor (FET) topology, using a mixture of n-type FETs and p-type FETs. The device uses several gain stages, including multiple drive stages and high-gain stages. These stages are interconnected in a single signal path, allowing for a high level of gain. This topology also reduces the level of noise, resulting in a low noise figure.
The device has several features that make it suitable for RF applications. First, the gain stages are optimized for operation in the frequency range of 240 to 960 MHz. This allows for a high level of gain in this frequency range. Secondly, the device has a wide-bandwidth input and output, which allows for operation in multiple frequency bands. The input and output impedance of the device is also optimized, allowing for minimal losses and maximum gain.
The amplifyer also has a built-in protection circuit that prevents the device from sustaining damage due to large input signals. The built-in protection circuit keeps the device secure from distortion and ensures that the signal can pass through the device without any loss of quality.
The BLA8G1011LS-300GU is a high-performance amplifier that is specifically designed for RF applications. It has a low-noise figure, wide-bandwidth operation, and an integrated protection circuit, making it ideal for a wide range of communications applications. The device is packaged in a 24-pin flat pack, making it suitable for use in a wide range of systems.
The specific data is subject to PDF, and the above content is for reference
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BLA8G1011L-300U | Ampleon USA ... | 231.99 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
BLA8G1011LS-300GU | Ampleon USA ... | 231.99 $ | 1000 | RF FET LDMOS 65V 16DB SOT... |
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