BLS7G2729L-350P,11

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The BLS7G2729L-350P is a high frequency n-channel enhancement mode power MOSFET from Vishay Siliconix. It is part of the Vishay Siliconix N-channel MPT6P series product family, which features high-frequency compact size for operation up to 10GHz, high operating voltage up to 350V and low on-resistance RDS(ON). This MOSFET is offered in the TO-236AB (SOT-23-6) surface-mount package, making it ideal for high-frequency switching applications such as RF power amplifiers, receivers and switched-mode power supplies.

In an RF MOSFET, the high frequency switching is driven by gate-source voltage VGS and can be further enhanced by gate-drain voltage VGD. It is a voltage-controlled device, meaning it is operated by a voltage applied between its gate and source terminal. When VGS is low or zero, there is no current flow between drain and source and the device is considered to be off. On increasing the VGS, a channel of electrons is formed between the drain and the source which allows current to flow. This is called the ‘on’ state. When the voltage is increased beyond a certain value, the device attains its ‘saturation’ state where drain current is limited only by the device’s RDS(ON).

The BLS7G2729L-350P is designed for many different applications. Its ability to operate at frequencies of up to 10GHz make it suitable for high-frequency switching, such as RF power amplifiers, receivers and switched-mode power supplies. It is also used in CMOS logic level shifting, high-power switching, infrared remote control and wireless communication applications. Due to its low input capacitance and very low ON-resistance values at high gate-drain voltages, this device is also used in high-speed buffer amplifiers and high-frequency power regulators.

The primary benefit of this MOSFET is its ability to operate at frequencies of up to 10GHz, which is its main advantage over conventional MOSFETs which are limited to only a few MHz. This makes the BLS7G2729L-350P highly suitable for high-speed switching applications. It also has a low input capacitance and low RDS-on values, making it ideal for high-frequency power regulation and amplifier regulation. This device has a low drain to source leakage, which is an advantage in CMOS logic level shifting applications, where it can switch between logic levels without any current leakage.

In addition to its high-frequency performance, the BLS7G2729L-350P also has other significant advantages. For example, it is capable of handling high operating voltages of up to 350V, making it an ideal choice for high-voltage applications. Its small size and surface-mount package are also advantageous as they provide a space-saving solution in high-frequency switching applications and allow it to be easily integrated into a design. Finally, its low total gate charge, low input capacitance and low on-resistance RDS(ON) values result in faster switching rates and better performance.

The BLS7G2729L-350P from Vishay Siliconix is a high-frequency n-channel enhancement mode power MOSFET designed for operation up to 10GHz. It is primarily used in RF power amplifiers and receivers, switched-mode power supplies, CMOS logic level shifting, high-power switching, infrared remote control and wireless communication applications. Its advantages include high operating voltage of up to 350V, low input capacitance, low on-resistance RDS(ON) values, low total gate charge and small size, which make it an ideal choice for high-frequency switching applications.

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