BLS7G3135LS-200U

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLS7G3135LS-200U is a high-power Field Effect Transistor (FET) designed for use in Radio Frequency (RF) applications. It is part of a family of devices that uses the latest advances in FET technology to deliver superior RF performance, higher efficiency, and lower overall power consumption. The BLS7G3135LS-200U is a lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) that provides very low noise figure, wide operating frequency range, and good input return loss.

The BLS7G3135LS-200U features an advanced gate structure, which provides the frequency performance necessary for RF applications. This FET also has an optimized output network to ensure the highest power gain and output power over a wide frequency range. Additionally, the device has an enhanced gate drive system, which provides better current handling capabilities and improved drain efficiency.

The BLS7G3135LS-200U is designed to provide high efficiency and low power dissipation, while also delivering excellent linearity and power gain over a wide bandwidth. The device can operate over a wide temperature range and is compatible with a variety of type of substrate materials. The FET is robust and reliable and is capable of handling high powers as well as improved EMI performance.

The BLS7G3135LS-200U has excellent switching characteristics, which enable it to be used in a wide variety of RF applications such as transmitters and receivers, microwave, and High-Definition Television (HDTV) systems. The FET has the advantage of providing very low noise figure, a wide operating frequency range, and good input return loss. Therefore, the device is suitable for high-power or low-noise applications, and is designed to provide exceptional performance with little or no external components.

The BLS7G3135LS-200U is designed to be used with a variety of substrates and offers maximum power gain and minimal power dissipation. The FET’s high efficiency and low noise figure provides the desired performance without sacrificing integration time. Additionally, the device is designed to reduce its power consumption, allowing it to operate at lower power levels than other FETs. As a result, the BLS7G3135LS-200U is a dependable and efficient solution for RF applications.

The specific data is subject to PDF, and the above content is for reference