BLS7G2933S-150,112 Allicdata Electronics
Allicdata Part #:

BLS7G2933S-150,112-ND

Manufacturer Part#:

BLS7G2933S-150,112

Price: $ 234.99
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 60V 13.5DB SOT9221
More Detail: RF Mosfet LDMOS 32V 100mA 2.9GHz ~ 3.3GHz 13.5dB 1...
DataSheet: BLS7G2933S-150,112 datasheetBLS7G2933S-150,112 Datasheet/PDF
Quantity: 1000
20 +: $ 213.62400
Stock 1000Can Ship Immediately
$ 234.99
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.9GHz ~ 3.3GHz
Gain: 13.5dB
Voltage - Test: 32V
Current Rating: 33A
Noise Figure: --
Current - Test: 100mA
Power - Output: 150W
Voltage - Rated: 60V
Package / Case: SOT922-1
Supplier Device Package: CDFM2
Description

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The BLS7G2933S-150,112 transistor is a device used in multiple applications, such as RF communication and switching. The BLS7G2933S-150,112 belongs to a class of semiconductor devices called Field-Effect Transistors, or FETs. This particular device is a MOSFET (metal-oxide-semiconductor field-effect transistor), specifically a type known as a high-frequency (RF) transistor. A MOSFET will generally have three terminals, the gate, source and drain, although the BLS7G2933S-150,112 has only two terminals, the gate and the source.

The basic working principle of a high-frequency field-effect transistor is that it operates by controlling the electrons at the source and drain in response to a voltage applied to the gate. When a voltage is applied to the gate, it creates an electric field across the gate oxide, which in turn polarizes the nearby electrons. These polarized electrons are then able to move from the source to the drain without the need for an additional external voltage. By controlling the voltage applied to the gate, the polarization of the electrons can be varied, allowing the transistor to act as a switch and control the flow of current through the source and drain.

The BLS7G2933S-150,112 is primarily used in RF communication applications, such as cellular telephone transmitters, two-way radios, and other wireless communication devices. Its high frequency performance and low noise figure makes it ideally suited for these applications. It is also used in switching applications, where the on/off characteristics of the gate voltage control the current flow through the source and drain. These characteristics make the transistor useful in applications such as logic circuits, blocking oscillators, and signal converters.

The BLS7G2933S-150,112 also offers excellent power dissipation capabilities, with a maximum power rating of 1W. This makes it an ideal device for use in high power applications, such as wireless data links, wireless video links, and high power transmitters.

In summary, the BLS7G2933S-150,112 is a high-frequency, low noise, MOSFET transistor which is used primarily for RF communication and switching applications. It offers excellent power dissipation capabilities and is suitable for use in high power applications.

The specific data is subject to PDF, and the above content is for reference

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