BLS7G3135LS-350P,1

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The BLS7G3135LS-350P is a voltage drive high performance N-channel enhancement mode MOSFET which is suitable for RF applications. This product of Transistors - FETs, MOSFETs - RF can provide superior RF performance over a large temperature range (-55°C to 175°C). It is ideal for applications such as oscillator circuits, front-end amplifiers, low-noise multi-stage amplifiers, mixers, switches, and DC/DC converters.

The FET consists of a single N-Channel MOSFET, with a total gate charge of 350pC and drain-source current rating of 16A. The gate-drain capacitance is typically 150pF, and the drain-source on resistance is typically 0.29Ω. The drain-source voltage (VDSS) rating for this device is 80V. Its maximum voltage rating for the drain-source is 100V.

In a MOSFET, an electric field is formed by the gate-source voltage, which modulates the conductivity of the channel between the drain and the source. The conductive channel between the drain and the source is a semi-conductor and can change its conductivity as the electric field of the gate voltage is changed. When a voltage is applied to the gate, it attracts the electrons in the channel and attracts them more towards the gate reducing the channel\'s resistance. When the applied voltage is removed, the electrons return to their original position and the channel\'s resistance increases.

An important characteristic of a MOSFET is its drain-source on resistance, which is it\'s resistance in the on-state. For the BLS7G3135LS-350P, it has a typical on-state resistance (RDS) of 0.29Ω, making it a very efficient device for applications such as low-noise amplifiers and DC/DC converters.

The BLS7G3135LS-350P is a very reliable device, with a maximum junction temperature rating of 175°C, ensuring that it can be used in high temperature applications. It is also capable of operating in a wide range of temperatures from -55°C to 175°C, making it suitable for a wide range of RF applications.

The BLS7G3135LS-350P is a very versatile and reliable device, making it an excellent choice for RF applications. It has a low on-state resistance, allowing it to provide superior performance, while it is able to operate in a wide range of temperatures, making it suitable for use in a variety of applications.

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