BMS4003 Allicdata Electronics
Allicdata Part #:

BMS4003-ND

Manufacturer Part#:

BMS4003

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 18A TO-220ML
More Detail: N-Channel 100V 18A (Ta) 2W (Ta), 25W (Tc) Through ...
DataSheet: BMS4003 datasheetBMS4003 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220ML
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 20V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 11.4nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 65 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BMS4003 is a single field-effect transistor (FET) with a metal-oxide-semiconductor field-effect transistor (MOSFET) arrangement. These FETs are specifically designed for high frequency amplifiers, analog switches, and digital logic circuits.

The device is available in a plastic package in both the N-channel and P-channel configurations. It also has a high input impedance, high output current capability, and is capable of operating at frequencies up to 200MHz. The BMS4003 is designed to provide a cost-effective solution for low-power, high-speed digital logic applications.

The BMS4003 has a three-terminal structure, with a gate terminal, a source terminal, and a drain terminal. The gate terminal of the FET is connected to a metal oxide gate layer that is insulated from the source and drain terminals. The metal oxide layer acts as an insulator, preventing the flow of current between the source and drain terminals, and allowing the FET to be controlled with a relatively small amount of gate current.

The gate voltage controls the conductivity between the source and drain terminals by modifying the electrical field of the metal oxide layer. The gate voltage applied to the FET results in a change in the current flowing between the source and drain terminals. If the gate voltage is increased, it increases the negative charge on the gate and reduces the current by reducing the resistivity of the source-drain channel. Conversely, if the gate voltage is reduced, it decreases the negative charge on the gate and increases the current flow by increasing the resistivity of the source-drain channel.

The BMS4003 is a very useful device for digital logic circuits. Its fast switching time and ability to operate at high frequencies make it an ideal logic element for many digital applications. It is also used in analog applications, as its low gate voltage operation provides high switching speed and low power dissipation. Additionally, its resistance levels can be adjusted by altering the magnitude of the gate voltage.

The BMS4003 is a versatile device that provides the user with a wide range of capabilities. The wide range of gate voltages and switching speeds make it an ideal choice for many applications, from high frequency amplifiers to digital logic circuits. Its low power dissipation and fast switching time make it a great choice for a variety of applications. The BMS4003 is a cost-effective solution for low-power, high-speed digital logic applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "BMS4" Included word is 3
Part Number Manufacturer Price Quantity Description
BMS4003 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 100V 18A TO-2...
BMS4007 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 75V 60A TO-22...
BMS4007-1E ON Semicondu... 1.93 $ 170 MOSFET N-CH 75V 60A TO-22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics