Allicdata Part #: | BMS4003-ND |
Manufacturer Part#: |
BMS4003 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 18A TO-220ML |
More Detail: | N-Channel 100V 18A (Ta) 2W (Ta), 25W (Tc) Through ... |
DataSheet: | BMS4003 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220ML |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 680pF @ 20V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The BMS4003 is a single field-effect transistor (FET) with a metal-oxide-semiconductor field-effect transistor (MOSFET) arrangement. These FETs are specifically designed for high frequency amplifiers, analog switches, and digital logic circuits.
The device is available in a plastic package in both the N-channel and P-channel configurations. It also has a high input impedance, high output current capability, and is capable of operating at frequencies up to 200MHz. The BMS4003 is designed to provide a cost-effective solution for low-power, high-speed digital logic applications.
The BMS4003 has a three-terminal structure, with a gate terminal, a source terminal, and a drain terminal. The gate terminal of the FET is connected to a metal oxide gate layer that is insulated from the source and drain terminals. The metal oxide layer acts as an insulator, preventing the flow of current between the source and drain terminals, and allowing the FET to be controlled with a relatively small amount of gate current.
The gate voltage controls the conductivity between the source and drain terminals by modifying the electrical field of the metal oxide layer. The gate voltage applied to the FET results in a change in the current flowing between the source and drain terminals. If the gate voltage is increased, it increases the negative charge on the gate and reduces the current by reducing the resistivity of the source-drain channel. Conversely, if the gate voltage is reduced, it decreases the negative charge on the gate and increases the current flow by increasing the resistivity of the source-drain channel.
The BMS4003 is a very useful device for digital logic circuits. Its fast switching time and ability to operate at high frequencies make it an ideal logic element for many digital applications. It is also used in analog applications, as its low gate voltage operation provides high switching speed and low power dissipation. Additionally, its resistance levels can be adjusted by altering the magnitude of the gate voltage.
The BMS4003 is a versatile device that provides the user with a wide range of capabilities. The wide range of gate voltages and switching speeds make it an ideal choice for many applications, from high frequency amplifiers to digital logic circuits. Its low power dissipation and fast switching time make it a great choice for a variety of applications. The BMS4003 is a cost-effective solution for low-power, high-speed digital logic applications.
The specific data is subject to PDF, and the above content is for reference
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