BMS4007-1E

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220ML
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	2W (Ta), 30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9700pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	7.8 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	60A (Ta)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BMS4007-1E belong to a class of field-effect transistors (FETs), specifically metal-oxide-semiconductor FETs (MOSFETS). A FET is a semiconductor device that utilizes electron charge to control the flow of electricity. While FETs, and MOSFETs, have a variety of applications, the BMS4007-1E is designed for use as a single-gate device. This type of FET, commonly known as a single-gate FET, is capable of acting as a switch to control the flow of current through, and can also act as a regulator to control the voltage supplied to the device.Understanding the BMS4007-1E’s Working PrincipleAt the core of FETs are two sets of electrodes, known as the source and drain. Electrical current is created when electrons flow from the source to the drain, where the electrical potential of the electrons is the same. The flow of electrons is then controlled by a third electrode known as the “gate”, which when charged with a voltage, can either allow or restrict the flow of electrons. The strength of the electric field created by this “gate” voltage determines the resistance of the FET and determines the current flow, which is why FETs are often referred to as voltage-controlled devices.The BMS4007-1E is a single-gate FET which utilizes the same basic principle and utilizes a single gate to control the flow of current between the source and the drain. The primary benefit of utilizing a single gate is that it eliminates the need for multiple separate gates which can often greatly reduce the complexity and cost associated with FETs. Additionally, the single gate design of the BMS4007-1E significantly improves the gate dielectric strength and thereby increases the performance and reliability of the device.Applications of the BMS4007-1EThe BMS4007-1E is designed for use in a variety of applications, primarily as a voltage regulator and a switch. As a voltage regulator, the BMS4007-1E is able to maintain a constant voltage signal regardless of demand changes, allowing for a reliable output voltage regardless of fluctuating demand. The BMS4007-1E is also able to used as a Switch, which is the main purpose of most FETs. By changing the voltage of the gate, the resistance between the source and the drain can be adjusted, allowing the current flow to be controlled. This makes the BMS4007-1E ideal for switching applications as it is able to quickly and accurately switch between a steady output voltage and an on/off state.The BMS4007-1E is also ideal for power control applications as it is capable of high current switching and low power consumption. This makes the BMS4007-1E an ideal choice for high current power control applications such as power supplies, motor drives, and high current switching applications.ConclusionThe BMS4007-1E is a single-gate field-effect transistor that has a variety of applications. The single-gate design of the BMS4007-1E makes it ideal for use as both a switch and a regulator as it is able to quickly and accurately switch between different output voltages while consuming minimal power. Additionally, the BMS4007-1E is also well-suited for power control applications such as power supplies and motor drives. By utilizing the FET’s ability to control the resistance between the source and the drain, the BMS4007-1E is able to reliably control the high current output and provide a consistent high level of power to the device.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description