| Allicdata Part #: | BS250P-ND |
| Manufacturer Part#: |
BS250P |
| Price: | $ 0.70 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 45V 230MA TO92-3 |
| More Detail: | P-Channel 45V 230mA (Ta) 700mW (Ta) Through Hole T... |
| DataSheet: | BS250P Datasheet/PDF |
| Quantity: | 24027 |
| 1 +: | $ 0.63630 |
| 10 +: | $ 0.56133 |
| 100 +: | $ 0.44377 |
| 500 +: | $ 0.34414 |
| 1000 +: | $ 0.27169 |
| Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package: | TO-92-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 700mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 10V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 14 Ohm @ 200mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
| Drain to Source Voltage (Vdss): | 45V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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A BS250P transistor is a P-channel silicon transistor. It is a commonly used P-channel MOSFET (metal-oxide-semiconductor field-effect transistor). The BS250P is designed for a wide range of applications in the field of power electronics, making it an ideal choice for applications in the audio amplifier, regulated power supply and large-signal switching.
The BS250P has some unique properties, which include a lower on-resistance of 1.20 ohms, a high voltage rating of 30 volts, a high peak current rating of 1.90 amps, and a maximum operating temperature of 175°C. The P-channel MOSFET also has a maximum gate capacitance of 5.5pF and a maximum gate threshold voltage of 3V. The package size is SOT-223, which means the BS250P is small in size and easy to use, and is suitable for many designs requiring a small footprint.
The BS250P is an enhancing-mode device, meaning that it requires a gate voltage greater than the source voltage in order to turn on. In other words, the gate voltage must be higher than the source voltage in order to cause current to flow. This makes the BS250P ideal for use in applications where the source voltage varies, such as audio amplifiers and switching power supplies.
The BS250P has several advantages over traditional P-channel MOSFETs. For instance, it does not require a body diode for protection, which simplifies the design process and improves the efficiency of the design. Additionally, the low on-resistance of the BS250P can reduce the power dissipation, thus making it more attractive for high power applications. Furthermore, the BS250P has a very fast switching speed, which reduces the need for critical timing components and improves the speed and accuracy of the overall design.
The BS250P is now widely used for power amplifiers, regulated power supplies and high frequency switching circuits. Due to its low on-resistance, high current handling capability, and fast turn-on/turn-off time, the BS250P can be used to replace traditional bipolars in many applications. Additionally, the low gate capacitance of the BS250P makes it ideal for high frequency switching applications. In short, the BS250P is an ideal choice for a wide range of power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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BS250P Datasheet/PDF