BSC882N03MSGATMA1 Allicdata Electronics
Allicdata Part #:

BSC882N03MSGATMA1TR-ND

Manufacturer Part#:

BSC882N03MSGATMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 34V 22A TDSON-8
More Detail: N-Channel 34V 22A (Ta), 100A (Tc) 2.5W (Ta), 69W (...
DataSheet: BSC882N03MSGATMA1 datasheetBSC882N03MSGATMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss): 34V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSC882N03MSGATMA1 is a singly-packaged FET. A FET, or Field Effect Transistor, is a type of transistor that uses an electric field to control the switching, biasing and amplification of a signal. The FET can be used in both analog or digital applications and is capable of powering and controlling the flow of current.

Unlike other transistors, FETs require much lower currents in order to remain turned on. This makes them far more efficient than other types of transistors and allows them to operate at higher frequencies. FETs also offer superior performance when it comes to heat dissipation, noise reduction and high speed switching. All of these performance characteristics make FETs an ideal choice for many applications.

The BSC882N03MSGATMA1 can be used in a variety of applications, such as power converters, motor drives, switching converters and data converters. It features a high-side gate driver, low-side gate driver and integrated power MOSFET. This integrated power MOSFET allows the BSC882N03MSGATMA1 to switch and control larger voltage gains. The BSC882N03MSGATMA1 also features a built-in gate protection circuit, which provides added security and protection for the circuit.

When it comes to the working principle of the BSC882N03MSGATMA1, it relies on an internally generated electric field. This electric field is created by a voltage applied to the gate. As the voltage increases, the electric field increases as well, allowing more current to flow through the device. This current can be controlled and regulated by varying the voltage applied to the gate. This type of control is used in many applications for both digital and analog signals.

The BSC882N03MSGATMA1 is a powerful and versatile tool for switching, biasing and controlling applications. It offers superior performance when it comes to heat dissipation, noise reduction and high-speed switching. Its integrated power MOSFET allows the device to switch and control larger voltage gains, while its built-in gate protection circuit provides added security and protection for the circuit. With its wide range of applications, the BSC882N03MSGATMA1 is one of the best FETs on the market.

The specific data is subject to PDF, and the above content is for reference

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