Allicdata Part #: | BSC883N03MSGATMA1TR-ND |
Manufacturer Part#: |
BSC883N03MSGATMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 34V 19A TDSON-8 |
More Detail: | N-Channel 34V 19A (Ta), 98A (Tc) 2.5W (Ta), 57W (T... |
DataSheet: | BSC883N03MSGATMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PG-TDSON-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3200pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 3.8 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 98A (Tc) |
Drain to Source Voltage (Vdss): | 34V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The BSC883N03MSGATMA1 is a type of Field-Effect Transistor (FET circuits). It is a single, N-channel MOSFET, meaning it is a type of transistor composed of a thousand or more individual transistors as an integrated circuit. It is an extraordinarily powerful device, and has a wide range of applications in analog, digital and power electronics.
At the heart of the BSC883N03MSGATMA1 is a metallicoxide semiconductor field-effect transistor (MOSFET). MOSFETs are the primary type of FET used in switching and amplifier applications in electric circuits, and they are currently the most versatile form of FET devices. There are three primary types of MOSFETs: pMOSFETs, nMOSFETs, and depletion MOSFETs. As the BSC883N03MSGATMA1 is a nMOSFET, it is made with a p-type substrate and an n-type control gate.
The BSC883N03MSGATMA1 works by relying on the voltage being generated when current flows across a semiconductor. It behaves as a low-impedance electronic switch that is opened or closed by the gate voltage, allowing to manipulate the amount of current that is drawn from and delivered to the circuit. When the voltage between the source and drain is high, the MOSFET will conduct (meaning, it is switched on); when the voltage is low, it will not conduct (it is turned off). This mechanism is otherwise referred to as voltage control.
The BSC883N03MSGATMA1 has a wide range of applications, including audio amplifiers, non-isolated power supplies, RF amplifiers, digital signal processors and switching power supplies. In many cases, it is used to improve efficiency, reduce noise and increase power applications. In power systems, the BSC883N03MSGATMA1 is used in both DC-DC converters and AC-DC converters, as the use of its common source power connection helps reduce power consumption, improve power transfer efficiency and reduce input/output distortion problems when used in these applications.
The BSC883N03MSGATMA1 also has utility in temperature sensing applications. Its wide operating temperature range (−55 °C to 175 °C) and fast response time make it an ideal device for temperature compensation and/or control. While its applications in temperature sensing vary depending on the particular application, it can be used to protect sensitive systems from high temperatures or to regulate the temperature of a specific region. In addition, the device can be used to actively regulate the temperature of LED fixtures and LED arrays.
Overall, the BSC883N03MSGATMA1 is a powerful single, n-channel MOSFET that exhibits low on-resistance, relatively low threshold voltage, and high breakdown voltage. Its wide range of applications and fast response times make it an excellent choice for a variety of applications, including switching and amplifier applications, power electronics, temperature sensing, and LED temperature regulation.
The specific data is subject to PDF, and the above content is for reference
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