
Allicdata Part #: | 1727-6215-2-ND |
Manufacturer Part#: |
BSH202,215 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 30V 520MA SOT23 |
More Detail: | P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.07173 |
Vgs(th) (Max) @ Id: | 1.9V @ 1mA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 417mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 24V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 280mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 520mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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?BSH202,215 is a High Voltage N-Channel Enhancement Mode Field Effect Transistor (FET). It has a drain-source breakdown voltage (BVDSS) of 400V, drain current (ID) of 5A and a drive voltage of 5.25V. This makes it suitable for use in high power applications such as power switches and motor control.
The BSH202,215 is a junction gate field-effect transistor (JFET), which is a three-terminal device.
The three terminals of this transistor are the gate, the source and the drain. The gate is the input terminal, which is used to control the current flow through the transistor. The source and the drain are the output terminals, which are used to pass the current through the transistor.
The FET operates in two different modes; the cutoff mode and the saturation mode. In the cutoff mode, the source-to-drain current (ID) is zero, meaning the FET is off and the gate voltage must be below a certain level to keep the FET in the cutoff mode. In the saturation mode, the source-to-drain current (ID) is at its maximum level and the gate voltage must be above a certain level to keep the FET in saturation.
The FETs are used in a variety of applications, such as motor control, audio amplifiers, power switching, and digital logic. In motor control applications, FETs can be used to control the speed and direction of motors. In audio amplifiers, FETs can be used to create a high-gain amplifier with low distortion. In power switching applications, FETs can be used to switch large amounts of power from one circuit to another. In digital logic applications, FETs can be used to create complex logic circuits.
The working principle of a FET is based on the principle of electric field interaction between two terminals. A voltage is applied to the gate of the FET, and this voltage creates an electric field between the source and the drain. This electric field will induce a current between the source and the drain, depending on the strength of the electric field. This current is affected by the impedance of the circuit and the channel width of the FET. By changing the gate voltage, it is possible to control the amount of the current flowing between the source and the drain.
The BSH202,215 is a versatile FET that has many potential applications. It can handle large amounts of power and can be used in high-power switching applications, audio amplifiers, motor control, and digital logic circuits. With its high surge current and voltage ratings, it is a reliable device for these applications.
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