BSH207,135

Vgs(th) (Max) @ Id:	600mV @ 1mA
Package / Case:	SC-74, SOT-457
Supplier Device Package:	6-TSOP
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	417mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 9.6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	8.8nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	120 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	1.52A (Ta)
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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BSH207,135 Application Field and Working Principle

Introduction

BSH207,135 is a voltage-controlled MOSFET single Field Effect Transistor (FET). FETs are a family of semiconductor devices whose basic functioning mechanism is based on an electrical field, instead of a traditional electrical current. They have been used for a variety of applications, ranging from radio frequency (RF) electronics to switching and control systems for industrial applications. This article will focus on the application field and working principle of BSH207,135.

Application Field

BSH207,135 is an ideal FET for use in low-voltage, high-speed switching and power control applications, such as portable devices like smartphones, tablets, and digital cameras. It can also be used in larger systems to provide a wide range of voltage and current control functions, such as power supply regulation, power management, motor speed control, battery charging, and inverter circuit design.In addition, BSH207,135 is also suitable for applications in the telecommunications and communications industries, such as mobile base-stations and IC chipsets. Furthermore, it is also commonly used in medical devices, including medical imaging, ultrasound equipment, and other medical instruments.

Working Principle

The BSH207,135 is a voltage-controlled MOSFET and is constructed using a pair of semiconductor layers, one of which is p-type, the other n-type. These layers are separated by a metal oxide-semiconductor (MOS) gate, which is a thin insulating layer of material that is composed primarily of silicon dioxide and metal.When a voltage is applied to the gate, it attracts electrons from the N-type layer, creating a depletion layer in which charge carriers are in a limited supply. This layer is known as a depletion region and it has a high impedance, meaning that only a small amount of current can pass through.The depletion region enables the BSH207,135 to amplify an input voltage, which then creates an output voltage. The current through the transistor is controlled directly by the amount of voltage on the gate and is known as the "gate-source voltage". The current flowing through the FET will remain constant as long as the gate-source voltage is not changed.

Conclusion

In conclusion, BSH207,135 is a voltage-controlled MOSFET single FET that is widely used in a range of applications. It is suitable for a variety of low-voltage, high-speed switching and power control applications, including portable devices, telecommunications and communications, and medical devices. The working principle of the BSH207,135 is based on the creation of a depletion layer to enable the FET to amplify an input voltage, creating an output voltage.

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