BSO080P03NS3GXUMA1

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The BSO080P03NS3GXUMA1 is a single N-channel enhancement mode vertical DMOS field-effect transistor (FET).Developed and manufactured by Bourns, the device is designed to have enhanced reliability and low on-resistance with a low gate charge.

The device aims to provide a high performance, low-cost solution for a wide range of applications across the automotive, communications, computing, consumer electronics, and power management industries.

As an enhancement mode FET, the transistor does not require an input signal to turn the N-channel ON. Instead, it responds to the voltage applied to its gate relative to its source. With a positive voltage applied to the gate relative to the source, the N-channel is fully turned ON, allowing the transistor to achieve its maximum current and power handling capabilities. Conversely, with a negative gate to source voltage, the N-channel is fully turned OFF, preventing current flow and reducing total power consumption.

The device is designed to automatically adjust its output current or power in response to changing load conditions or to optimize efficiency. This is accomplished by adjusting its source-drain voltage in response to changes in the gate voltage. This adjustment is known as the transconductance, and is measured in milliAmperes per volt (mΩ).

The device is typically used in high-voltage applications, including switch mode power supplies, active bridge circuits, AC to DC converters, battery chargers, and DC to DC converters. The device is also used in low-voltage applications, such as motor driver circuits, amplifier circuits, and high-efficiency audio amplifiers.

The device is built on a silicon carbide substrate, which provides excellent durability and reliability even under extreme temperatures or high voltages. The dielectric strength and thermal resistance of the substrate make it ideal for applications where transient voltage or high temperatures are present. The device is also designed to have a low input capacitance, resulting in a fast switching speed.

In addition, the device has a low on-resistance, enabling it to handle higher current and power loads. The device also has a low gate charge, enabling it to optimize efficiency while still providing an adequate power handling capacity. Finally, the device features a low leakage current, ensuring that current is not wasted when the device is turned OFF.

The BSO080P03NS3GXUMA1 is a versatile device, offering a wide range of applications for both high- and low-voltage applications. The device is designed to provide reliable performance and efficient power handling, making it an excellent choice for a variety of power management applications. The device is also built to withstand extreme temperature ranges, making it suitable for automotive and other rugged environments.

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