BSO094N03S Allicdata Electronics
Allicdata Part #:

BSO094N03S-ND

Manufacturer Part#:

BSO094N03S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 10A 8DSO
More Detail: N-Channel 30V 10A (Ta) 1.56W (Ta) Surface Mount PG...
DataSheet: BSO094N03S datasheetBSO094N03S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 30µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.56W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
Series: OptiMOS™
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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BSO094N03S is a widely used semiconductor device from Infineon, a widely recognized digital innovator in the electronics industry. It is a single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) featuring both high current switching and low voltage drive capability. MOSFETs are a type of transistor used for switching and amplifying electronic signals. They are widely used in amplifier circuits and digital circuits, but their most common application is in power electronics systems.

MOSFETs differ from other types of transistors in that they use electrostatic charge instead of an electrical base current to control the current flow. This is done by sending an electric field through a gate, which causes a voltage drop across the channel, and in turn causes the current to change. This is referred to as an “enhancement mode” MOSFET, which is what this BSO094N03S is.

The BSO094N03S is ideal for use in high-power switching applications, such as in high-power DC-DC converters, as it has a low on-resistance of just 0.089 ohms. This low resistance allows for significant power savings, as the voltage drop across the device will be small and the power dissipation low. It also has a high current rating, around 70 amperes, and is capable of switching voltages up to 60 volts.

This unit requires an activating voltage, known as the “gate threshold voltage”, to turn the device on. This is typically around 3 volts for this particular MOSFET, but can change depending on application conditions. This threshold voltage is applied to the gate terminal to turn the device on and begin passing current through the channel.

Once the device is activated, the substrate and gate terminals must be biased in order to maintain functionality. The gate terminal must be held at a voltage higher than the substrate terminal in order to keep the MOSFET in the on-state. This ensures the MOSFET will remain conducting until the gate threshold voltage is removed.

The BSO094N03S can be used in a variety of applications, including motor control circuits, switching-mode power supplies, and AC/DC converters. It is also used in battery charger circuits where high-efficiency operation is necessary, as the device can precisely control the charge current and ensure accurate regulation of voltage.

The Infineon BSO094N03S is a highly capable semiconductor device and a valuable addition to any circuit design engineer’s toolkit. Its combination of low resistance and high current capacity make it well suited for a variety of power electronic applications, from motor control to power converters. Its ability to precisely control current and switch voltages up to 60 volts make it a great choice for efficient power management.

The specific data is subject to PDF, and the above content is for reference

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