Allicdata Part #: | BSS7728NH6327XTSA1TR-ND |
Manufacturer Part#: |
BSS7728NH6327XTSA1 |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 200MA SOT23 |
More Detail: | N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS7728NH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.04632 |
Vgs(th) (Max) @ Id: | 2.3V @ 26µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 56pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Besser7728NH6327XTSA1 transistors are a type of field effect transistors (FETs) that have a number of advantages over other transistors. The most important being their low power consumption, high reliability and low cost. These advantages make FETs ideal for use in a variety of applications including power management, communications, medical, industrial and aerospace applications.
Besser7728NH6327XTSA1 FETs are constructed using a single layer of metal oxide semiconductor (MOS) material. This layer is made up of a semiconductor gate and a power layer, which are connected together by a gate channel. The gate channel operates analogous to that of a gate resistor and it can control the flow of electrical current. By applying electric voltage to the gate channel, a voltage can be generated across the gate channel which can control the flow of current. This type of transistors can be found in a range of packages from the conventional TO-3 to the much smaller TO-2.
One of the main applications of the Besser7728NH6327XTSA1 FETs is in power regulation and management. This can be achieved by connecting the FETs to a power supply, such as a battery or a DC power line. The FETs act as a switch, controlling the current flow and maintaining a constant power output to the system. The FETs have to be specially designed in order to perform this function, and they must be placed in the proper orientation to ensure that they are properly isolated from the power source and other devices.
Another application of Besser7728NH6327XTSA1 FETs is in communications. The FETs can be used to provide a high power signal transmission between two points. They can be used in applications such as telephone or GSM networks, as well as for computer networking. The FETs provide signal signal transmission with less noise and interference, and they can also be used to transmit higher-frequency signal with improved range and accuracy.
Besser7728NH6327XTSA1 transistors are also used in medical technology. Medical equipment such as MRI scanners use the FETs to regulate the power outputs to achieve maximum accuracy and visibility. They can also be used in medical circuit design to reduce or eliminate false readings or miscalculations. Finally, Besser7728NH6327XTSA1 FETs are used in various industrial and aerospace applications.
In conclusion, Besser7728NH6327XTSA1 transistors are a type of field effect transistors (FETs) that have numerous advantages over other transistors. They are used in a variety of applications including power management, communications, medical, industrial and aerospace applications. Their low power consumption, high reliability and low cost make them an ideal solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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