Allicdata Part #: | BSS7728NH6327XTSA2-ND |
Manufacturer Part#: |
BSS7728NH6327XTSA2 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 200MA SOT23 |
More Detail: | N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS7728NH6327XTSA2 Datasheet/PDF |
Quantity: | 1000 |
12000 +: | $ 0.03545 |
Vgs(th) (Max) @ Id: | 2.3V @ 26µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 56pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | Automotive, AEC-Q101, SIPMOS® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BSS7728NH6327XTSA2 is a single-ended n-channel MOSFET (metal-oxide semiconductor field effect transistor) device with a high-grade self-protected feature and low on-state resistance. This type of transistor is usually used in applications such as converters and power supplies, automated equipment, lighting controls, and motor drivers, among others.
The MOSFET is a voltage-controlled electronic device with three terminals: the gate, the source and the drain. The behavior of the transistor is based on the principle of a field effect, in which two lightly doped terminals (the source and drain) control the electrical conductivity of the component. According to this concept, the input voltage (VGS) modifies the conductivity, allowing a conduction chain between the source and the drain, controlling the electrical current (ID).
At lower voltages, a few millivolts are enough to enable a conduction chain (covered by a thin insulating layer). This insulating layer acts as a barrier, connecting the source and the drain when the voltage (VGS) is applied.
The BSS7728NH6327XTSA2 component provides excellent protection against electrostatics discharge (ESD). The area, located between the gate and the source, is designed to hold the voltage below a certain level, protecting the component against overvoltage situations.
This MOSFET also features a low on-state resistance, reducing the power loss during operation, and an improved gate-charge dynamic definition to increase efficiency. These two features guarantee a better control over the power dissipation through the drain, improving the device performance in medium voltage applications.
BSS7728NH6327XTSA2 is a very reliable component, specially designed for medium voltage applications, such as automotive converters, DC/DC converters, battery-powered devices, dimming systems, load switching, and motor drivers. Thanks to its excellent protection mechanism, the component is also suitable for high-temperature applications, such as Automotive and lighting systems.
To sum up, BSS7728NH6327XTSA2 is an excellent single-ended n-channel MOSFET device, featuring a high-grade self-protected feature and a low on-state resistance. This component is best suited for medium voltage applications, such as automotive converters, DC/DC converters, dimming systems, and motor drivers, as well as for high-temperature applications, such as Automotive and lighting systems. Thanks to its high reliability and easy handling, the BSS7728NH6327XTSA2 is a perfect choice for your most demanding applications.
The specific data is subject to PDF, and the above content is for reference
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