BYG21M-E3/TR Discrete Semiconductor Products |
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Allicdata Part #: | BYG21M-E3/GITR-ND |
Manufacturer Part#: |
BYG21M-E3/TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 1KV 1.5A |
More Detail: | Diode Avalanche 1000V 1.5A Surface Mount DO-214AC ... |
DataSheet: | BYG21M-E3/TR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.6V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 120ns |
Current - Reverse Leakage @ Vr: | 1µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BYG21M |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BYG21M-E3/TR is a single silicon rectifier designed for high voltage and high frequency applications. This rectifier is designed using advanced technology to ensure reliable performance and excellent electrical characteristics. BYG21M-E3/TR has an average forward current rating up to 25 amperes, an average reverse voltage rating up to 50 volts, and a wide working frequency range from 0 to 10 kHz.
The BYG21M-E3/TR is a popular choice for many applications, including power supplies, automotive lighting, and industrial machines. In addition, this rectifier has excellent thermal performance, making it suitable for a wide range of high speed applications. This rectifier also offers a wide variety of packages, including through-hole, surface mount, and flat packages as well as a low-profile form factor.
BYG21M-E3/TR works on the principle of PN junction diode. When a forward voltage is applied to the PN junction, electrons from n-side flow to the p-side, creating a thin PN layer. The thin PN layer allows a current to flow through the circuit. However, when the forward voltage exceeds the peak inverse voltage of the diode, the current stops flowing and the diode acts as an open circuit.
The BYG21M-E3/TR is capable of rectifying DC power with high efficiency, low VSWR (Voltage Standing Wave Ratio), and no surge. It also offers good thermal characteristics and easy assembly. This rectifier can handle up to 75A in continuous operation, with a peak forward current rating up to 200 A. Additionally, it has high surge current capability and excellent temperature stability, making it suitable for use in high-voltage industrial applications.
BYG21M-E3/TR is used in high-frequency power conversion devices such as chargers, solar inverters, UPS, and high-efficiency AC-DC converters. The rectifier can also be used in battery charging applications where high ripple current and high peak voltage are required. This rectifier can be used in automotive and military applications, medical devices, and power supply systems. In addition, it is suitable for both indoor and outdoor applications.
In summary, BYG21M-E3/TR is a single silicon rectifier designed for high voltage and high frequency applications. It has excellent performance and has a wide range of packages available. It offers excellent thermal characteristics and can handle high current and high surge currents. This rectifier is suitable for a wide range of applications, including power supplies, automotive lighting, industrial machines, and battery charging systems.
The specific data is subject to PDF, and the above content is for reference
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BYG20D R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 200V 1.5A ... |
BYG21M R3G | Taiwan Semic... | 0.07 $ | 3600 | DIODE AVALANCHE 1KV 1.5A ... |
BYG22A-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG21K-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 800V 1.5A... |
BYG22B-E3/TR | Vishay Semic... | 0.13 $ | 3600 | DIODE AVALANCHE 100V 2A D... |
BYG23M-E3/TR3 | Vishay Semic... | -- | 150000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG21M-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23M-E3/TR | Vishay Semic... | -- | 55800 | DIODE AVALANCHE 1KV 1.5AD... |
BYG23T-M3/TR | Vishay Semic... | -- | 84600 | DIODE AVALANCHE 1300V 1A ... |
BYG22AHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 50V 2A DO... |
BYG22BHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 100V 2A D... |
BYG22DHM3_A/H | Vishay Semic... | 0.15 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG22DHE3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG24J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG21M M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG20D M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 200V 1.5A ... |
BYG20G M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG20J M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
BYG21MHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE AVALANCHE 1.5A DO21... |
BYG23M M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG23M R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 1.5A DO214... |
BYG20G R3G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 400V 1.5A ... |
BYG21MHR3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE AVALANCHE 1KV 1.5A ... |
BYG21M-E3/TR3 | Vishay Semic... | 0.08 $ | 15000 | DIODE AVALANCHE 1KV 1.5AD... |
BYG20J-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG22D-E3/TR | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20D-E3/TR | Vishay Semic... | -- | 5400 | DIODE AVALANCHE 200V 1.5A... |
BYG22D-E3/TR3 | Vishay Semic... | 0.11 $ | 1000 | DIODE AVALANCHE 200V 2A D... |
BYG20G-E3/TR | Vishay Semic... | -- | 3600 | DIODE AVALANCHE 400V 1.5A... |
BYG20D-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG20G-E3/TR3 | Vishay Semic... | 0.07 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG20J-E3/TR3 | Vishay Semic... | -- | 1000 | DIODE AVALANCHE 600V 1.5A... |
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BYG24D-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR3 | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
BYG24D-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 200V 1.5A... |
BYG24G-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 400V 1.5A... |
BYG24J-M3/TR | Vishay Semic... | 0.08 $ | 1000 | DIODE AVALANCHE 600V 1.5A... |
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