BYG23T-M3/TR Allicdata Electronics
Allicdata Part #:

BYG23T-M3/TR-ND

Manufacturer Part#:

BYG23T-M3/TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE AVALANCHE 1300V 1A DO214AC
More Detail: Diode Avalanche 1300V 1A (DC) Surface Mount DO-214...
DataSheet: BYG23T-M3/TR datasheetBYG23T-M3/TR Datasheet/PDF
Quantity: 84600
Stock 84600Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1300V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1300V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: BYG23T
Description

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A BYG23T-M3/TR diode is a single rectifier diode with a reverse conduction or reverse voltage rating of 3 Amp, 200V mean. It is used as a quadplexer, individual rectifier or in pairs as a full wave rectifier. The BYG23T-M3/TR diode has a PN junction structure that can be used in a wide range of applications. This article will discuss the application field and the working principle of the BYG23T-M3/TR diode.

Application Field

The BYG23T-M3/TR diode can be used in a range of applications. Some of the most important ones are:

  • Lighting control systems
  • UPS systems
  • Solar panels
  • Power supplies
  • DC-DC conversion modules
  • Rectifying circuits

The BYG23T-M3/TR diode is also well suited for use in high temperature operating conditions up to 200°C. This makes it an excellent choice for use in earth leakage protection products such as residual current circuit breakers and in earth leakage detection circuitry.

Working Principle

A diode is a two-terminal electrical device which allows current to flow in one direction while blocking the flow in the other. This is known as rectification and is the basis of the working of a diode. The BYG23T-M3/TR diode consists of an anode, marked with a plus sign, and a cathode, marked with a minus sign. When a potential difference (voltage) is applied across the anode and the cathode, then current flows through the device in the anode-to-cathode direction.

The BYG23T-M3/TR diode uses a PN junction structure which is designed to maximize current efficiency and minimize power losses. The PN junction acts as a barrier for voltage which allows for greater control of the flow of electrons. It also helps to prevent the reverse flow of current.

The BYG23T-M3/TR diode is designed to operate with a wide operating temperature range from -40°C to 200°C. It has a reverse voltage rating of 3 Amp, 200V mean and can handle peak surge currents up to 7.5 Amp. The diode is also capable of withstanding voltages up to 1000V.

Conclusion

The BYG23T-M3/TR diode is a single rectifier diode with a reverse conduction or reverse voltage rating of 3 Amp, 200V mean. It is used in a range of applications such as lighting control, UPS systems, solar panels, power supplies, rectifying circuits and other DC-DC conversion modules. The diode has a PN junction structure and is designed to handle high temperatures up to 200°C and peak surge currents up to 7.5 Amp.

The specific data is subject to PDF, and the above content is for reference

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