BYG20J R3G Discrete Semiconductor Products |
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Allicdata Part #: | BYG20JR3GTR-ND |
Manufacturer Part#: |
BYG20J R3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1.5A DO214AC |
More Detail: | Diode Standard 600V 1.5A Surface Mount DO-214AC (S... |
DataSheet: | BYG20J R3G Datasheet/PDF |
Quantity: | 1800 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 1µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction to BYG20J R3G
The BYG20J R3G is a type of single rectifier diode. It belongs to a family of diodes called Schottky Barrier diodes. The reasons why these types of diodes were chosen were mainly due to their high current density, low voltage drop, fast switching speed, and higher temperature and frequency capability.Application Field
BYG20J R3G diodes are mainly used in power supply applications, such as AC/DC converters, power supply rectification, rectification of DC line current, boost converters etc. They can also be used in the automotive sector, radio frequency applications, power switching circuits, and telecommunication applications. The BYG20J R3G has a low forward voltage and high current capability, making it suitable for applications that require highly efficient and low-cost solutions.Working Principle
The BYG20J R3G is a Schottky Barrier Diode. A Schottky Barrier Diode is a semiconductor p-n junction that has a metal-semiconductor contact between the anode and cathode. When voltage is applied to the anode and cathode, a diffusion of electrons occur at the metal-semiconductor junction, resulting in a depletion layer formed between the two. The depletion layer acts as an insulating barrier, forming a Schottky Barrier, preventing electrons from travelling across the junction other than in the forward direction. Once the voltage is applied, current flows through the diode in the forward direction, allowing current to pass from cathode to anode. The diode then functions as a closed switch, meaning current can only flow from cathode to anode and not from anode to cathode. The BYG20J R3G also has a low reverse recovery time, meaning that it can switch quickly between on and off states. This makes it more efficient in applications that require quick switching of power. In summary, the BYG20J R3G is a Schottky Barrier Diode designed for use in power supply applications, such as AC/DC converters, rectification of DC line current, boost converters, and other power switching circuits. It has a low forward voltage and high current capability, making it suitable for applications that require efficient, low cost solutions. It has a low reverse recovery time, allowing it to switch between on and off states quickly.The specific data is subject to PDF, and the above content is for reference
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