Allicdata Part #: | BYG24G-M3/TR-ND |
Manufacturer Part#: |
BYG24G-M3/TR |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 400V 1.5A |
More Detail: | Diode Avalanche 400V 1.5A Surface Mount DO-214AC (... |
DataSheet: | BYG24G-M3/TR Datasheet/PDF |
Quantity: | 1000 |
12600 +: | $ 0.07108 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1.5A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 140ns |
Current - Reverse Leakage @ Vr: | 1µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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BYG24G-M3/TR is a high-speed, low-loss Schottky barrier single rectifier for applications requiring the maximum reliability and power efficiency. This Rectifier is an ideal choice for high frequency switching power supplies, aircraft, and automotive applications. This rectifier diode has a high frequency turn-on, a low Forward Voltage drop, and a low Reverse Leakage Current, making it well-suited for power electronic applications.
The BYG24G-M3/TR rectifier diode utilizes state-of-the-art Schottky barrier technology for maximum performance and reliability. This device is constructed using advanced high voltage MOSFETs which deliver superior switching performance compared to conventional rectifiers. Its high frequency turn-on time allows for fast switching of the MOSFET, making the BYG24G-M3/TR rectifier ideal for power electronics applications where speed, accuracy, and reliability are essential.
The BYG24G-M3/TR rectifier diode consists of four distinct components. The anode and cathode of the diode serve as the two terminals of the device. The anode is connected to the device\'s input, while the cathode is connected to the output. The other two components are the body and the gate. The body is the main component for the rectifying action of the diode, while the gate is responsible for controlling the switching operation.
When a voltage is applied across the anode and cathode of the BYG24G-M3/TR rectifier diode, a current will flow from the anode to the cathode, with some of the current lost due to the forward voltage drop. This causes the device to act as a rectifier, converting alternating current (AC) to direct current (DC). The gate can also be used to control the forward current, allowing the device to act as a rectifier with low distortion. The forward voltage drop of the BYG24G-M3/TR rectifier diode is typically only 0.82 volts, allowing greater power efficiency.
The BYG24G-M3/TR rectifier diode is ideal for use in applications requiring high frequency switching power supplies due to its high forward voltage drop and small reverse leakage. It is also well-suited for automotive and aircraft applications due to its superior switching performance, low forward voltage drop, and low reverse leakage current. In addition, the BYG24G-M3/TR rectifier diode is an excellent choice for power electronic applications where speed, accuracy, and reliability are of utmost importance.
In conclusion, the BYG24G-M3/TR rectifier diode is an excellent choice for applications requiring the maximum reliability and power efficiency. Its high frequency turn-on and low forward voltage drop make it ideal for high frequency switching power supplies, automotive, and aircraft applications. Additionally, its small reverse leakage current makes it an excellent choice for power electronic applications. Thus, the BYG24G-M3/TR is a versatile and reliable rectifier diode suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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