BYG23M-M3/TR

Series:	Automotive, AEC-Q101
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Avalanche
Voltage - DC Reverse (Vr) (Max):	1000V
Current - Average Rectified (Io):	1.5A
Voltage - Forward (Vf) (Max) @ If:	1.7V @ 1A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	5µA @ 1000V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AC, SMA
Supplier Device Package:	DO-214AC (SMA)
Operating Temperature - Junction:	-55°C ~ 150°C

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Application Field and Working Principle of BYG23M-M3/TR Rectifiers

Introduction

The BYG23M-M3/TR rectifier is a single-phase, low-loss, miniaturized, glass encapsulated rectifier module, designed for switching and rectification applications. It operates at a high temperature of up to 130 °C, ideal for high frequency, high power applications. This rectifier module is composed of seven external parts, namely the thoroidal core, semi-conductive field emitter (SCFE) barrier layer, minority carrier generator-collector, power transistor, diode bridge and isolation resistors.

Application Field

The BYG23M-M3/TR rectifier has a wide range of applications in the modern electronics. It can be used to rectify the waveforms of AC signals and convert them into DC power that can be used to drive the motor, control, relay and other electrical equipment. In switching applications, the rectifier can be used to provide continuous control over the on/off state of a circuit. Furthermore, the rectifier can also be used to regulate the power supply current, voltage, and frequency.

Working Principle

The working principle of the BYG23M-M3/TR rectifier is based on the PN junction diode behavior. The semiconductor structure of the rectifier is composed of two layers, one doped with P-type material (positive) and the other with N-type material (negative). When a forward-biased voltage is applied in the PN junction, electrons from the N-type side move across the PN junction towards the P-type side. This electrons-flow produces an electric current in a single direction, thus rectifying the AC signal into a DC signal. The rectifier includes an SCFE barrier layer, which is a unique feature of this rectifier. It acts as an insulation layer between the emitter and collector side and controls the flow of electrons. The majority carrier generator-collector structure is also used to help the flow of electrons and thus increases the efficiency of the rectifier. The thoroidal core is used to transfer the heat generated by the rectifier. The power transistor acts as a switch and works with the diode bridge to control the signal flow. Isolation resistors are used in between the rectifier’s terminals to protect the rectifier from any undesired signal influx.

Conclusion

In conclusion, the BYG23M-M3/TR rectifier is a high-power, high-temperature, miniaturized rectifier module, which is used for switching and rectification applications. It works by rectifying an AC signal into a DC signal using the PN junction diode behavior. The rectifier also incorporates various external parts, including the SCFE barrier layer, majority carrier generator-collector, thoroidal core, power transistor, diode bridge and isolation resistors, which help in controlling the signal flow.

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