Allicdata Part #: | BYG23T-M3/TR3-ND |
Manufacturer Part#: |
BYG23T-M3/TR3 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE AVALANCHE 1300V 1A DO214AC |
More Detail: | Diode Avalanche 1300V 1A (DC) Surface Mount DO-214... |
DataSheet: | BYG23T-M3/TR3 Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.09085 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 1300V |
Current - Average Rectified (Io): | 1A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.9V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 1300V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | BYG23T |
Description
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BYG23T-M3/TR3 is a type of rectifier diode, which has the features of low forward voltage drop, high reverse breakdown voltage rating and low leakage current, making it an ideal choice for a wide range of rectification, switching and protection applications.
When used in rectification applications, it allows a current to flow in a forward direction but blocks it in the reverse direction, thus allowing unidirectional current. It also functions to protect circuits and devices from excessive voltage and drop unwanted voltage, as well as to reduce electrical noise in a circuit.
In regards to the working principle of the BYG23T-M3/TR3, it is based on the PN junction theory, wherein there is a clear difference in the properties of the n-type and p-type materials on the semiconductor. This creates a built-in electric field which which is able to control the direction of current flow. The diode has two basic terminals, an anode, and a cathode whose characteristics differ and thus allows for easy connection and usage. The anode is usually connected to the positive terminal of the supply, while the cathode is connected to the negative terminal.
When current is applied, electrons move to the anode and set up a reverse bias across the junction. This flow stops abruptly when the applied voltage reaches the breakdown voltage, allowing some current to flow in reverse direction and enabling the diode to block and/or reduce significantly any excessive voltage in the circuit. In addition, the reverse currents depend on temperature, and thus the diode can be used for temperature compensation.
The BYG23T-M3/TR3 is typically used in power supplies, voltage multipliers, inverters and choppers, ideal for DC to DC conversion, charging, switching and protection applications. It also provides protection from high-voltage spikes and can be used in switching applications with low power loss and high efficiency, making it a highly versatile diode for applications where rectification, voltage regulation and protection of circuits are required.
In conclusion, the BYG23T-M3/TR3 is a type of rectifier diode which has the features of low forward voltage drop, high reverse breakdown voltage rating and low leakage current. With its PN junction theory and two terminals, it is ideal for rectification, switching and protection applications, providing voltage regulation and protection of circuits from high-voltage spikes.
When used in rectification applications, it allows a current to flow in a forward direction but blocks it in the reverse direction, thus allowing unidirectional current. It also functions to protect circuits and devices from excessive voltage and drop unwanted voltage, as well as to reduce electrical noise in a circuit.
In regards to the working principle of the BYG23T-M3/TR3, it is based on the PN junction theory, wherein there is a clear difference in the properties of the n-type and p-type materials on the semiconductor. This creates a built-in electric field which which is able to control the direction of current flow. The diode has two basic terminals, an anode, and a cathode whose characteristics differ and thus allows for easy connection and usage. The anode is usually connected to the positive terminal of the supply, while the cathode is connected to the negative terminal.
When current is applied, electrons move to the anode and set up a reverse bias across the junction. This flow stops abruptly when the applied voltage reaches the breakdown voltage, allowing some current to flow in reverse direction and enabling the diode to block and/or reduce significantly any excessive voltage in the circuit. In addition, the reverse currents depend on temperature, and thus the diode can be used for temperature compensation.
The BYG23T-M3/TR3 is typically used in power supplies, voltage multipliers, inverters and choppers, ideal for DC to DC conversion, charging, switching and protection applications. It also provides protection from high-voltage spikes and can be used in switching applications with low power loss and high efficiency, making it a highly versatile diode for applications where rectification, voltage regulation and protection of circuits are required.
In conclusion, the BYG23T-M3/TR3 is a type of rectifier diode which has the features of low forward voltage drop, high reverse breakdown voltage rating and low leakage current. With its PN junction theory and two terminals, it is ideal for rectification, switching and protection applications, providing voltage regulation and protection of circuits from high-voltage spikes.
The specific data is subject to PDF, and the above content is for reference
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