Allicdata Part #: | BZD27B110P-M3-08GITR-ND |
Manufacturer Part#: |
BZD27B110P-M3-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 110V 0.8W DO-219AB |
More Detail: | Zener Diode 110V 800mW Surface Mount DO-219AB (SM... |
DataSheet: | BZD27B110P-M3-08 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, BZD27B-M |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 110V |
Tolerance: | -- |
Power - Max: | 800mW |
Impedance (Max) (Zzt): | 250 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 82V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
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Introduction
The BZD27B110P-M3-08 is a single Zener diode with an exceptional performance score. It may also be called an "voltage-controlled semiconductor device", which is based on the process of spontaneous space charge accumulation in a reverse-biased PN junction
Applications
The key advantage of a Zener diode is its variety of application fields. It is most commonly used as a voltage regulator, in which case it is used to limit the input voltage to a predetermined limit. Zener diodes are also used in a wide range of circuits, such as switching circuits, overvoltage protection circuits, laser-diode driver circuits, lamp circuits, and transistor bias circuits.
Zener diodes have also been used in frequency-dependent signal attenuation, such as in combining networks, low-power signal transmission circuits, negative voltage sources, and constant current sources. Additionally, these devices can be used in the development of electronic test equipment, sample-and-hold circuits, optical isolators, cascode circuits, and reference voltage circuits.
Working Principle
The working principle of the BZD27B130P-M3-08 can be broken down into two main parts - the breakdown region, and the forward region. In the breakdown region, where the reverse bias voltage reaches the breakdown voltage, the pn junctions in the diode become increasingly conductive, allowing electric current to flow.
In the forward region, current is allowed to flow through the junction, with a voltage directly proportional to the applied voltage. The diode exhibits a constant reverse bias voltage over a wide range of currents, regardless of temperature or applied voltage. It also exhibits very low junction capacitance and a low forward voltage drop.
Conclusion
The BZD27B110P-M3-08 is a highly efficient single Zener diode, which can be used in a number of applications. It offers a wide range of voltage regulation, and has low current leakage and low junction capacitance. By understanding the breakdown region and forward region of the diode, one can make the most of this device in their circuit designs.
The specific data is subject to PDF, and the above content is for reference
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BZD27C12P-E3-08 | Vishay Semic... | -- | 21000 | DIODE ZENER 800MW SMF DO2... |
BZD27C16P-E3-08 | Vishay Semic... | -- | 21000 | DIODE ZENER 800MW SMF DO2... |
BZD27C6V2P-E3-08 | Vishay Semic... | 0.11 $ | 18000 | DIODE ZENER 800MW SMF DO2... |
BZD27C8V2P-E3-08 | Vishay Semic... | -- | 3000 | DIODE ZENER 8.2V 800MW DO... |
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BZD27B120P-M3-08 | Vishay Semic... | 0.08 $ | 3000 | DIODE ZENER 120V 0.8W DO-... |
BZD27B12P-M3-08 | Vishay Semic... | -- | 3000 | DIODE ZENER 12V 0.8W DO-2... |
BZD27B15P-M3-08 | Vishay Semic... | 0.08 $ | 3000 | DIODE ZENER 15V 0.8W DO-2... |
BZD27B16P-M3-08 | Vishay Semic... | 0.08 $ | 3000 | DIODE ZENER 16V 0.8W DO-2... |
BZD27B30P-M3-08 | Vishay Semic... | 0.08 $ | 3000 | DIODE ZENER 30V 0.8W DO-2... |
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