BZD27B11P-M3-08

The BZD27B11P-M3-08 is a type of diode which falls in the category of Zener – single. It is mainly employed in the field of power management applications, such as in circuits where voltage regulators and voltage references are used, as well as more intense applications such as overvoltage protection for other parts of the circuit.

As a Zener diode, the BZD27B11P-M3-08 operates with a controlled breakdown voltage that is maintained by an electrical characteristic called a Zener effect. As with most types of diodes, the BZD27B11P-M3-08 is made up of two layers of semiconductor material. When reversed biased, the diode feeds a current that is limited to the Zener breakdown voltage in a process known as Zener breakdown, due to a region of high doping located near the diode junction. This allows the diode to limit the voltage passing through it, regardless of the current.

The static breakdown voltage, or the forward break down voltage (which is established during manufacturing), is the key electrical parameter of the BZD27B11P-M3-08 and an important selection criteria. The breakdown voltage is typically 11V and 16V in the BZD27B11P-M3-08. The device can also function as a voltage regulated limiter under specified range of reverse current. On-state resistance is in the range of 1.1-12 KΩ.

The standard power dissipation rating of the BZD27B11P-M3-08 is 250mW, with a peak pulse power dissipation rating of 500mW. The allowable junction temperature of the diode is between 175 and 125 °C. The device has an insulation voltage rating of 500V, with a continuous reverse voltage rating of 40V. It is designed to be able to withstand up to 60V for 15 seconds.

The BZD27B11P-M3-08 Zener diode is offered in an SOD-128 package with separate versions for surface mount and through-hole mounting applications. The diode is among the most popular components used in the power electronics industry due to its reliability and cost-effectiveness. It has excellent thermal resistance and easy mounting facility. Furthermore, it has a low temperature coefficient and offers good stability.

Due to its built-in Zener breakdown technology, the BZD27B11P-M3-08 diode also excels in voltage regulation applications, such as voltage reference modules, as well as high-power switching applications. As such, the BZD27B11P-M3-08 is suitable for a variety of high-Power DC-DC conversion applications, including automotive, telecom systems, high-power switching devices and industrial control systems. In addition, the diode can be employed as an over-voltage protection device in ripple current circuits.

In conclusion, the BZD27B11P-M3-08 Zener diode is an extremely versatile and cost-effective solution for power management and voltage regulation applications. Its ability to withstand high current at relatively low voltages, combined with its built-in Zener breakdown technology and wide range of temperatures, makes it a reliable and effective choice for many applications.