Allicdata Part #: | BZD27B4V3P-M3-08GITR-ND |
Manufacturer Part#: |
BZD27B4V3P-M3-08 |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 4.3V 0.8W DO-219AB |
More Detail: | Zener Diode 4.3V 800mW Surface Mount DO-219AB (SM... |
DataSheet: | BZD27B4V3P-M3-08 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.07641 |
6000 +: | $ 0.07178 |
15000 +: | $ 0.06715 |
30000 +: | $ 0.06174 |
Series: | Automotive, AEC-Q101, BZD27B-M |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 4.3V |
Tolerance: | -- |
Power - Max: | 800mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 25µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 200mA |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
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Diodes - Zener - Single
The BZD27B4V3P-M3-08 is a single zener diode. It\'s a low voltage device designed for a wide range of applications. The device is designed to be used in a variety of electrical circuit configurations, including both AC and DC applications.
Application Field
Zener diodes are most often used to limit the voltage across a circuit, preventing damage from electricity surges. They are used in rectification, protection, and stabilization circuits. These diodes have a low forward voltage drop and provide low power dissipation with an accurate zener voltage. They are also great for applications in noise suppression and circuit current limiters.
The BZD27B4V3P-M3-08 is suitable for applications such as battery operated devices, energy harvesters, and automotive applications. Its low junction capacitance and low forward voltage make it a great choice for high speed switching applications.
Working Principle
A zener diode is made of two semiconductor materials, an anode and a cathode. When a current is applied through the device, free electrons move from the n-type material to the p-type material. This causes a flow of electrons from the anode to the cathode.
When the reverse bias voltage applied to the device is greater than the breakdown voltage of the device, the electrons begin to flow through the junction in a reverse direction. This causes the breakdown of the junction, releasing a surge of current. The current and voltage from this surge is controlled by the value of the breakdown voltage.
The BZD27B4V3P-M3-08 has a breakdown voltage of 4.3V, allowing it to be used in a wide variety of applications. Its high voltage and current ratings make it ideal for high frequency circuits. Its reverse leakage and avalanche current are also low, ensuring that it will perform well in low power applications.
Summary
The BZD27B4V3P-M3-08 is a single zener diode. It is designed to be used in a variety of applications, such as protection, rectification, and noise suppression. It has a breakdown voltage of 4.3V and is suitable for applications such as battery operated devices and automotive electronics. The working principle of a zener diode is that when a reverse bias voltage is greater than the breakdown voltage of the device, electrons will flow through the junction in a reverse direction, releasing a surge of current. The current and voltage of this surge is controlled by the breakdown voltage, allowing it to be used in both AC and DC applications.
The specific data is subject to PDF, and the above content is for reference
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