BZD27C180P-E3-08 Allicdata Electronics

BZD27C180P-E3-08 Discrete Semiconductor Products

Allicdata Part #:

BZD27C180P-E3-08GITR-ND

Manufacturer Part#:

BZD27C180P-E3-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 800MW SMF DO219
More Detail: Zener Diode 180V 800mW Surface Mount DO-219AB (SM...
DataSheet: BZD27C180P-E3-08 datasheetBZD27C180P-E3-08 Datasheet/PDF
Quantity: 30000
Stock 30000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101, BZD27C
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 180V
Tolerance: --
Power - Max: 800mW
Impedance (Max) (Zzt): 400 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 130V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Description

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The BZD27C180P-E3-08 is a single zener diode that excels in several applications. It is mainly used to protect operational amplifiers, ensure their normal operation and employ it either as a protective diode or a voltage regulator. It is also used for active clamping and over-voltage protection. This diode’s features highlight a zener voltage of 180V, power dissipation of 5W, an operating temperature range from -65℃ to +150℃, thermal resistance of 7.8K/W, maximum reverse surge current of 90mA and a Junction temperature of 150℃.The BZD27C180P-E3-08 is primarily used to regulate voltage currents. This is because it prevents a voltage that is fed to a device from exceeding a certain level. Thus, it will fire and absorb the excess voltage, which helps to keep the voltage supplied to the device within the acceptable operating range. This diode is also employed to protect operational amplifiers by providing them with over-current protection or over-voltage protection. Furthermore, it is also used for active clamping and frequency compensating.The BZD27C180P-E3-08 is structured as a single zener diode, and its operation mechanism is quite simple. This device only conducts current in the forward direction, and a negligible amount of reverse current is allowed to flow through it. On the other hand, when the voltage in the reverse direction crosses over a breakdown voltage, a high intensity current flows, which is enough to cause the device to breakdown. This breakdown phenomenon is known as the Zener effect and it occurs due to the bonds between electrons, protons and the nucleus of the diode. The advantage of the BZD27C180P-E3-08 over other devices lies in its robust design, compact size and its low profile. Since it is structured as an ultra-thin, chip-like device, it consumes very little space challenging the boundaries of traditional zener diode devices. In addition, the device is optimally designed for thermal dissipation, so it works efficiently even when faced with high temperature. Its low forward voltage drop of 0.3V adds to its efficiency. To conclude, the BZD27C180P-E3-08 is an ideal device for many applications given its structure and performance. Its robust design and ultra-thin form makes it suitable for various tasks such as protecting operational amplifiers and providing over-voltage protection. Its efficient thermal dissipation and low forward voltage drop make it a reliable device that can be used in various applications.

The specific data is subject to PDF, and the above content is for reference

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