BZD27C51P-E3-08 Discrete Semiconductor Products

Series:	Automotive, AEC-Q101, BZD27C
Packaging:	Tape & Reel (TR)
Part Status:	Active
Voltage - Zener (Nom) (Vz):	51V
Tolerance:	--
Power - Max:	800mW
Impedance (Max) (Zzt):	60 Ohms
Current - Reverse Leakage @ Vr:	1µA @ 39V
Voltage - Forward (Vf) (Max) @ If:	1.2V @ 200mA
Operating Temperature:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	DO-219AB
Supplier Device Package:	DO-219AB (SMF)

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Introduction

The BZD27C51P-E3-08 is an ultra-low-voltage, low-power and highly reliable single Zener diode. This device is designed for applications requiring an ultra-low voltage device. Its low-noise design, high ET112 and C50101 voltage ratings make it suitable for a wide range of applications.

Application Field and Working Principle

The BZD27C51P-E3-08 can be used in electronic devices, embedded systems and other applications requiring ultra-reliable and ultra-low operating voltages. Its wide operating temperature range makes it suitable for a variety of applications including medical, computer and telecommunications related equipment.The BZD27C51P-E3-08 operates by allowing a current to flow under reverse bias, between its anode and cathode. This reverse bias current is limited by its reverse voltage rating, and any further current is prevented from flowing by the Zener voltage of the device. This Zener voltage is essentially a low voltage breakdown point, limiting the amount of current flowing in the reverse direction.The BZD27C51P-E3-08 has a low Zener voltage of 6.2V, making it suitable for applications requiring ultra-low operating voltages. It has an operating temperature range of -55°C to +125°C, ensuring reliable operation under extreme environmental conditions. As a result, the BZD27C51P-E3-08 can be used in a variety of telecommunication, computer and medical related applications.The BZD27C51P-E3-08 also features low-PIV and low-current characteristics, as well as excellent junction capacitance. Its low PIV ensures reliable operation and low power dissipation, while its low-current characteristics make it suitable for a wide variety of low-voltage applications. In addition, its high junction capacitance ensures excellent transient protection and high-frequency noise suppression.

Advantages

The BZD27C51P-E3-08 is an ultra-reliable and highly efficient single Zener diode. Its low reverse voltage rating and high ET112 and C50101 voltage ratings make it suitable for a wide range of applications. Its wide operating temperature range ensures reliable operation under extreme environmental conditions. In addition, its low-PIV, low-current and high-junction capacitance characteristics make it an ideal choice for a variety of low-voltage applications.

Conclusion

The BZD27C51P-E3-08 is an ultra-reliable, low-power and highly efficient single Zener diode, suitable for applications in medical, computer and telecommunications related equipment. Its wide operating temperature range and excellent characteristics make it suitable for a wide range of applications. As such, the BZD27C51P-E3-08 is an ideal choice for applications requiring ultra-low operating voltages, low-PIV and high-junction capacitance.

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