BZT52-B10J Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7733-2-ND |
Manufacturer Part#: |
BZT52-B10J |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 10V 590MW SOD123 |
More Detail: | Zener Diode 10V 590mW ±2% Surface Mount SOD-123 |
DataSheet: | BZT52-B10J Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02231 |
30000 +: | $ 0.02116 |
50000 +: | $ 0.02001 |
100000 +: | $ 0.01809 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 10V |
Tolerance: | ±2% |
Power - Max: | 590mW |
Impedance (Max) (Zzt): | 10 Ohms |
Current - Reverse Leakage @ Vr: | 200nA @ 7V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52-B10J Zener Diode is a type of single diode used for general purpose applications including voltage regulation, switching, and signal processing. It is a part of a large family of diodes, but many of its features make it particularly well-suited for high voltage and low current applications.
The "B" in the part number, BZT52-B10J, stands for a low-power PNPN (self-biased Zener) type diode. This type of diode has an anode and cathode and is made up of two layers of highly conductive semiconductor material, a P-type material and an N-type material. In the Zener diode, the P-type material is placed at the anode, and the N-type material is placed at the cathode.
When a reverse voltage is applied to the diode, the voltage will eventually exceed the Zener Voltage (VZ) and current will begin to flow through the diode in the reverse direction. This reverse current is known as the Zener Current (IZ). The Zener Voltage (VZ) is determined by the type of semiconductor materials used and the doping levels of the two materials. It is important to note that the Zener current is greatly affected by the junction temperature.
The Zener voltage of the BZT52-B10J is rated at 10V and the Zener current (IZ) is 0.2mA. The Zener impurity concentration is also relatively high at 10 ns. This high level of impurity concentration ensures a wide breakdown voltage range and good electrical stability.
In terms of practical usage, the BZT52-B10J is ideally suited for use as a voltage regulator and can be used to provide a very stable voltage in applications such as power supplies, test equipment, and temperature compensated circuits. Many circuits require a specific voltage that can be easily adjusted, and the BZT52-B10J Zener diode provides precisely that.
The BZT52-B10J Zener diode is also well-suited for use as a switching element in digital circuits and as a signal-processing component in analog circuits. In a circuit that requires a voltage that fluctuates over time or between different devices or components, the BZT52-B10J is extremely useful. It can be used to reduce the voltage to an appropriate level for active components, as well as to ensure a more stable voltage in a passive component.
In conclusion, the BZT52-B10J Zener diode is an extremely useful component for general purpose applications. It’s low power requirements, wide voltage range, and high impurity concentrations make it ideal for use as a voltage regulator, as a switching element, and as a signal component.
The specific data is subject to PDF, and the above content is for reference
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