BZT52-B3V3X Discrete Semiconductor Products |
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Allicdata Part #: | 1727-7679-2-ND |
Manufacturer Part#: |
BZT52-B3V3X |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 3.3V 590MW SOD123 |
More Detail: | Zener Diode 3.3V 590mW ±2.12% Surface Mount SOD-12... |
DataSheet: | BZT52-B3V3X Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.02647 |
6000 +: | $ 0.02302 |
15000 +: | $ 0.01957 |
30000 +: | $ 0.01841 |
75000 +: | $ 0.01727 |
150000 +: | $ 0.01535 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 3.3V |
Tolerance: | ±2.12% |
Power - Max: | 590mW |
Impedance (Max) (Zzt): | 95 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Description
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IntroductionThe BZT52-B3V3X is a single Zener diode specifically designed for voltage regulation and noise suppression in industrial applications. It is constructed from high quality silicon-zinc alloy and is equipped with an anode and cathode to facilitate its bi-directional breakdown characteristics. The BZT52-B3V3X has a maximum breakdown voltage of 3.3V, a maximum power dissipation of 500mW, and an operating temperature ranging from -55C to +150C.
Application Fields
The BZT52-B3V3X diode has a wide range of applications in industrial electronics, including:
- Voltage regulation in power supplies for motor control, automotive and telecom applications.
- Noise suppression for low-level control signals in gesture recognition, healthcare and security systems.
- Clamping circuits for electrostatic discharge.
- Steering logic signals in LED displays.
Operating Principle
The BZT52-B3V3X diode operates on the principle of Zener breakdown. When a sufficient reverse voltage is applied across its anode and cathode, the electric field generated by the voltage causes a current to flow through the P-N junction. This current is known as the Zener current, and is responsible for breaking down the diode as the voltage applied to it exceeds the Zener voltage of the device. This breakdown serves to prevent over-voltage conditions in a circuit and to limit the current flowing through the device. This process also limits the voltage drop across the diode and produces a regulated voltage output.
Advantages
The BZT52-B3V3X diode offers several advantages for industrial applications:
- High reliability: The diode is constructed from a high quality silicon-zinc alloy, which enhances its durability and long-term reliability.
- High breakdown voltage: The diode has a maximum Zener breakdown voltage of 3.3V, which ensures optimal protection from voltage overshoot and transients.
- Low power dissipation: The device has a maximum power dissipation of 500mW, which minimizes power dissipation and conserves energy.
- Wide temperature range: The diode can operate in temperatures ranging from -55C to +150C, which makes it suitable for a variety of industrial applications.
Conclusion
The BZT52-B3V3X diode is a reliable and versatile solution for voltage regulation and noise suppression in industrial applications. Its high breakdown voltage, low power dissipation, wide temperature range, and bidirectional operation make it an ideal choice for a variety of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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