BZT52H-B68,115 Allicdata Electronics
Allicdata Part #:

1727-1615-2-ND

Manufacturer Part#:

BZT52H-B68,115

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 68V 375MW SOD123F
More Detail: Zener Diode 68V 375mW ±2% Surface Mount SOD-123F
DataSheet: BZT52H-B68,115 datasheetBZT52H-B68,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03271
6000 +: $ 0.02844
15000 +: $ 0.02418
30000 +: $ 0.02276
75000 +: $ 0.02133
150000 +: $ 0.01896
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 68V
Tolerance: ±2%
Power - Max: 375mW
Impedance (Max) (Zzt): 160 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 47.6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes are a key component of most electronic circuits and for many years have been available in standard rectifier, signal, point contact and other types. Recently, an emerging type of diode has gained attention in the field of electronics: the Zener diode. The BZT52H-B68,115 is a Zener diode designed to provide a high level of current and voltage control in a wide range of applications.

The BZT52H-B68,115 is a single-terminal diode capable of providing up to 115 volts of reverse voltage protection with very low forward voltage drop over a wide range of temperatures. It is designed to operate in both AC and DC circuit applications, making it a versatile device for many applications. In addition to reverse voltage protection, the BZT52H-B68,115 provides excellent theoretical input impedance, and very low power dissipation.

The BZT52H-B68,115 is a reliable and economical solution for many electrical and electronic applications. Its low forward voltage drop and wide voltage and temperature range make it an ideal choice for applications such as over-voltage protection, noise bypass, and transient suppressors, as well as general-purpose rectification and low-level signal conditioning. Its low power consumption also makes it a good choice for power supplies and other power management systems.

The working principle of the BZT52H-B68,115 is based on the characteristics of the Zener diode. This type of diode has a so-called "reverse breakdown region," in which a reverse voltage beyond a certain point causes a sudden drop in the diode\'s resistance. This sudden drop in resistance causes the diode to "break down" and a current to flow through it. The BZT52H-B68,115 is designed to be sensitive to this breakdown region and immediately begin conducting when the voltage reaches its breakdown voltage.

The BZT52H-B68,115 is designed to provide excellent thermal and electrical stability over a wide variety of temperatures, making it suitable for applications that require long-term reliable operation. It is also designed to allow low flow current leakage, allowing it to be effectively used as a current limiting device. The high input impedance of the diode also allows it to be used to isolate signals in applications with long lead lengths.

In summary, the BZT52H-B68,115 is an optimal solution for a variety of operations in a variety of applications. Its low forward voltage drop and wide voltage and temperature range make it ideal for applications such as over-voltage protection, noise bypass, low-level signal conditioning, as well as general-purpose rectification and power management systems. Its working principle is based on the reverse breakdown property of the Zener diode, which allows the device to conduct when the voltage reaches its breakdown voltage. Finally, the BZT52H-B68,115 provides excellent thermal and electrical stability over a wide variety of temperatures, and its low flow current leakage make it an effective choice for current limiting devices.

The specific data is subject to PDF, and the above content is for reference

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