BZT52C5V1S-TP Allicdata Electronics
Allicdata Part #:

BZT52C5V1S-TPMSTR-ND

Manufacturer Part#:

BZT52C5V1S-TP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: DIODE ZENER 5.1V 200MW SOD323
More Detail: Zener Diode 5.1V 200mW ±6% Surface Mount SOD-323
DataSheet: BZT52C5V1S-TP datasheetBZT52C5V1S-TP Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±6%
Power - Max: 200mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 2µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Base Part Number: BZT52C5V1
Description

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A BZT52C5V1-TP is a type of single Zener diode. It is comprised of two distinct layers of semiconductor material, separated by a junction. It works by conduction electrons from the N (negative) side to the P (positive) side, when the voltage on the N side is greater than the equivalent voltage on the P side. This type of diode can be used to limit the voltage applied to a circuit element or simply for the rectification of AC signals. One of its main advantages is its extremely low forward voltage drop, making it ideal for applications where space is limited.

The BZT52C5V1-TP is typically used in voltage-dependent applications such as over-voltage and transient protection, switching, and noise filtering. It is capable of handling high reverse voltages of up to 5.5V and can handle up to 500mA of continuous power. Its minimally low forward voltage drop of less than 0.3V makes it ideal for AC circuits which have a limited voltage budget. Additionally, it is capable of operating at temperatures ranging from -55°C to 125°C, making it highly suitable for use in automotive and industrial environments.

The BZT52C5V1-TP’s working principle is based on the characteristics of the P-N junction. When the diode is forward biased, the anode has excess positive charge, and the cathode has an excess of negative charge. As a result, a potential barrier is created and the current is restricted. On the other hand, when the diode is reversed biased, the P side has more positive charge and the N side has more negative charge. In this condition, electrons from the N side become attracted to the P side and are “swept” across the junction. This is known as Zener Breakdown, and is a key element of the diode’s operation.

Aside from applications in voltage-dependent circuits, the BZT52C5V1-TP can also be used to produce constant voltage outputs in power supplies and regulators. In these applications, the diode allows a current to pass through only when the voltage at the diode’s cathode is greater than the voltage at its anode. This ensures that a voltage of a specific magnitude is maintained across the output circuit.

The BZT52C5V1-TP is an ideal choice for a wide range of light and medium industrial and automotive applications. Its low forward voltage drop and wide operating temperature range make it suitable for use in a variety of environments, while its low noise characteristics make it ideal for filtering and rectification purposes. The diode’s ability to handle high voltage and power make it suitable for use in a range of over-voltage and transient protection applications.

The specific data is subject to PDF, and the above content is for reference

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