Allicdata Part #: | 1727-7735-2-ND |
Manufacturer Part#: |
BZT52-B15J |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | DIODE ZENER 15V 590MW SOD123 |
More Detail: | Zener Diode 15V 590mW ±2% Surface Mount SOD-123 |
DataSheet: | BZT52-B15J Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.02231 |
30000 +: | $ 0.02116 |
50000 +: | $ 0.02001 |
100000 +: | $ 0.01809 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 15V |
Tolerance: | ±2% |
Power - Max: | 590mW |
Impedance (Max) (Zzt): | 15 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 10.5V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BZT52-B15J is a single, zener diode specifically designed for special applications that require enhanced temperature stability. It is a 15-volt, very low leakage, general purpose, medium-current device with a low forward-voltage drop and low leakage current. The BZT52-B15J can be used in a variety of electronic and electrical devices, including battery-powered equipment, LED lighting, DC switches, power supplies and audio circuits.
The BZT52-B15J device is a special type of diode known as a zener diode. A zener diode, also known as a transient voltage suppressor, is a type of diode that is designed to have an extremely low voltage drop across its terminals when it is forward-biased. This property, combined with its temperature stability, makes the BZT52-B15J an ideal choice for various power management applications. Additionally, the BZT52-B15J has an extremely low reverse-voltage leakage, making it suitable for use in high-precision circuits.
In order to understand the working principle of the BZT52-B15J, it is necessary to look at a cross-section of the device. In a BZT52-B15J device, the P-type region (base) and N-type region (Drain) are interconnected in a mesa structure. When a forward bias is applied to the anode (An) and cathode (K), electrons are injected into the P-type region and holes are injected into the N-type region. As these injected carriers move through the base and drain regions, they cause a current flow. This current is directly proportional to the forward-bias voltage applied to the diode. When a reverse bias is applied to the anode and cathode, the diode reverses its direction of current flow and a low leakage current is produced.
In addition to its low-current applications, the BZT52-B15J can also be used for higher-current applications such as power supplies and motor controllers. In these applications, the BZT52-B15J\'s low-leakage characteristics allow current to pass through the device with minimal loss of power. In addition, its temperature stability allows it to remain stable in temperature-sensitive applications, making it an ideal choice for power management.
The BZT52-B15J is a versatile device that can be used in a variety of applications such as power supplies, motor controllers, LED lighting, DC switches and audio circuits. Its low-leakage characteristics, low-forward-voltage drop, and temperature stability make it an ideal choice for power management applications. Its ease of use and low cost make it a popular choice for many different types of projects.
The specific data is subject to PDF, and the above content is for reference
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