BZT52-B15J Allicdata Electronics
Allicdata Part #:

1727-7735-2-ND

Manufacturer Part#:

BZT52-B15J

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: DIODE ZENER 15V 590MW SOD123
More Detail: Zener Diode 15V 590mW ±2% Surface Mount SOD-123
DataSheet: BZT52-B15J datasheetBZT52-B15J Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02231
30000 +: $ 0.02116
50000 +: $ 0.02001
100000 +: $ 0.01809
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 15V
Tolerance: ±2%
Power - Max: 590mW
Impedance (Max) (Zzt): 15 Ohms
Current - Reverse Leakage @ Vr: 50nA @ 10.5V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BZT52-B15J is a single, zener diode specifically designed for special applications that require enhanced temperature stability. It is a 15-volt, very low leakage, general purpose, medium-current device with a low forward-voltage drop and low leakage current. The BZT52-B15J can be used in a variety of electronic and electrical devices, including battery-powered equipment, LED lighting, DC switches, power supplies and audio circuits.

The BZT52-B15J device is a special type of diode known as a zener diode. A zener diode, also known as a transient voltage suppressor, is a type of diode that is designed to have an extremely low voltage drop across its terminals when it is forward-biased. This property, combined with its temperature stability, makes the BZT52-B15J an ideal choice for various power management applications. Additionally, the BZT52-B15J has an extremely low reverse-voltage leakage, making it suitable for use in high-precision circuits.

In order to understand the working principle of the BZT52-B15J, it is necessary to look at a cross-section of the device. In a BZT52-B15J device, the P-type region (base) and N-type region (Drain) are interconnected in a mesa structure. When a forward bias is applied to the anode (An) and cathode (K), electrons are injected into the P-type region and holes are injected into the N-type region. As these injected carriers move through the base and drain regions, they cause a current flow. This current is directly proportional to the forward-bias voltage applied to the diode. When a reverse bias is applied to the anode and cathode, the diode reverses its direction of current flow and a low leakage current is produced.

In addition to its low-current applications, the BZT52-B15J can also be used for higher-current applications such as power supplies and motor controllers. In these applications, the BZT52-B15J\'s low-leakage characteristics allow current to pass through the device with minimal loss of power. In addition, its temperature stability allows it to remain stable in temperature-sensitive applications, making it an ideal choice for power management.

The BZT52-B15J is a versatile device that can be used in a variety of applications such as power supplies, motor controllers, LED lighting, DC switches and audio circuits. Its low-leakage characteristics, low-forward-voltage drop, and temperature stability make it an ideal choice for power management applications. Its ease of use and low cost make it a popular choice for many different types of projects.

The specific data is subject to PDF, and the above content is for reference

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