Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Diodes - Zener - Single

The BZT52-B6V8J is a Low Voltage Zener Diode which belongs to the Zener single diode family of diodes. The BZT52-B6V8J has a reverse standoff of 6V, a maximum reverse leakage current of 200 μA, a maximum power rating of 500 milliwatts (mW) and a junction temperature of 150 degrees Celsius (°C). The technology used for the manufacturing of this diode is the epitaxial planar technology.

The major applications of the BZT52-B6V8J are related to voltage regulation and protection of circuits from electrical overloading. The BZT52-B6V8J can be used in power lines, computer systems, radios and other electronic systems to provide voltage regulation and protection. It also has applications in surge protection for switch mode power supplies.

The working of the BZT52-B6V8J diode is based on Zener breakdowns. Zener breakdown occurs when a reverse bias voltage is over the breakdown voltage and it changes the nature of the electric field at the p-n junction of the diode. As the electric field increases, the valence band electrons escape from their atoms, leaving behind holes which are filled by electrons from the conduction band of the p-n junction. This results in an increase in the current flow in the reverse direction of the diode. Thus, Zener breakdown provides voltage regulation and protection.

The BZT52-B6V8J diode has several advantages for voltage regulation and surge protection. These include low power consumption, low noise level, wide temperature range, fast switching time, high efficiency and low actuating current.

In conclusion, the BZT52-B6V8J diode is a single Zener diode that can be used in various applications to provide voltage regulation and surge protection. It is manufactured using the epitaxial planar technology and works on the principle of Zener breakdown.

The specific data is subject to PDF, and the above content is for reference