BZT52B12-G RHG Allicdata Electronics
Allicdata Part #:

BZT52B12-GRHG-ND

Manufacturer Part#:

BZT52B12-G RHG

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE ZENER 12V 410MW SOD123
More Detail: Zener Diode 12V 410mW ±2% Surface Mount SOD-123
DataSheet: BZT52B12-G RHG datasheetBZT52B12-G RHG Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02693
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 12V
Tolerance: ±2%
Power - Max: 410mW
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 8V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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Diodes - Zener - Single

The BZT52B12-G RHG is a single Zener diode specifically designed for high-speed switching applications. It is commonly used in AC-to-DC bridge circuits and low-voltage DC-to-DC voltage converters. The diode is RoHS compliant, non-reversible and features a low capacitance.

Application Field

The BZT52B12-G RHG is ideal for high-speed applications such as communications, gaming and industrial applications due to its low capacitance and fast switching speed. The diode is designed to switch AC to DC in bridge circuits, as well as DC to DC in voltage converters. The Zener diode is available in DO-213AA, SOD-123 and DDPAK packages, making it suitable for a variety of applications.

Working Principle

The BZT52B12-G RHG is a single Zener diode designed with a low capacitance. The capacitance is achieved through a process during the manufacturing of the device that reduces the space between the cathode and anode. This helps reduce the capacitance and increase the switching speed.

The working principle of the BZT52B12-G RHG is based on the voltage-dependent breakdown of a PN junction diode. A PN junction diode is a semiconductor device consisting of a P-type semiconductor material adjacent to an N-type semiconductor material. When a voltage is applied across the PN junction, the electrons and holes on either side increase in mobility and tunnel through the junction. This increases current flow through the diode, resulting in a voltage drop across the diode.

The BZT52B12-G RHG is designed for low voltage and high speed. The voltage rating is 12V ± 5% and the operating temperature range is -55°C to +125°C. The maximum current rating is 0.5mA and the maximum surge forward current rating is 4.2A. The switching speed of the diode is 500ns. The diode is also designed to have a reasonably low capacitance of 1.2pF.

Conclusion

The BZT52B12-G RHG is a single Zener diode specifically designed for high-speed switching applications. It is available in DO-213AA, SOD-123 and DDPAK packages and is commonly used in AC-to-DC bridge circuits or low-voltage DC-to-DC voltage converters. The diode features a low capacitance, fast switching speed and a voltage rating of 12V ± 5%. The BZT52B12-G RHG is the ideal choice for a variety of high-speed applications such as communications, gaming and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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