BZT52B33-G3-18 Allicdata Electronics
Allicdata Part #:

BZT52B33-G3-18-ND

Manufacturer Part#:

BZT52B33-G3-18

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 33V 410MW SOD123
More Detail: Zener Diode 33V 410mW ±2% Surface Mount SOD-123
DataSheet: BZT52B33-G3-18 datasheetBZT52B33-G3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03014
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±2%
Power - Max: 410mW
Impedance (Max) (Zzt): 40 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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Diodes are a group of semiconductor components used for many purposes such as rectification, signal switching and regulating electrical currents. One type of diode, a Zener diode, is commonly used in the areas of power supply protection and circuit stabilisation. BZT52B33-G3-18 is one example of a Zener diode, and its application field and working principles are outlined in this article.

What is a Zener diode?

A Zener diode is a diode with a specialised, heavily doped p-n junction that allows it to act in reverse bias. This allows the electrons to travel from the n-side to the p-side of the diode, and this movement allows for a higher current flow in the opposite direction than with other types of diodes. This reversed bias characteristic of the Zener diode makes it suitable for use as a voltage regulator or over-voltage protector.

BZT52B33-G3-18 Application Field and Working Principle

The BZT52B33-G3-18 is a moderately sized Zener diode, with a maximum power dissipation of 500 mW and a breakdown voltage of 18 V. This makes it suitable for use in low to moderate power electronics applications, such as voltage regulation and protection in automotive, audio, telecommunications and other power systems. It is not suitable for higher power applications such as motor control or industrial machine control.

The working principle of the BZT52B33-G3-18 relies on the reversed biased characteristics of the p-n junction. When the voltage applied to the diode increases beyond the breakdown voltage for the diode, a larger current is allowed to flow through the diode in the opposite direction. This current stabilises the voltage across the diode, and ensures that it does not exceed the breakdown voltage. This prevents any over-voltage from damaging connected components.

Conclusion

The BZT52B33-G3-18 is a Zener diode which is ideally suited for low to moderate power electronics applications, such as voltage regulation and protection in automotive, audio, telecommunications and other power systems. It works by allowing a larger current to flow when the applied voltage exceeds the breakdown voltage, which prevents over-voltage damage. The characteristics of the BZT52B33-G3-18 make it a useful and reliable component for protecting sensitive electronics components.

The specific data is subject to PDF, and the above content is for reference

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